tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice ams 701 ams rf devices ams rf devices document page 1 of 2 general description silicon vdmos and ldmos transistors designed specifically for broadband rf applications. suitable for military radios, cellular and paging amplifier base stations, broadcast fm/am, mri, laser drives and others. the ams process features low feedback and ou tput capacitances, resulting in high f t transistors with high input impedance and high efficiency. silicon gate enhancement mode rf power vdmos transistor 25.0 watts single ended package style aa high efficiency, linear high gain, low noise rohs compliant absolute maximum ratings (t = 25 c) total device dissipation junction to case thermal resistance maximum junction temperature storage temperature dc drain current drain to gate voltage drain to source voltage gate to source voltage 60 watts 2.80 c/w 200 c - 65 c to 150 c 3.5 a 70 v 70 v 20 v rf characteristics (25.0 watts output) symbol parameter min typ max units test conditions gps common source power gain 13 db idq = 0.20 a, vds = 28.0 v, f = 175 mhz ? drain efficiency 85 % idq = 0.20 a, vds = 28.0 v, f = 175 mhz vswr load mismatch tolerance 20:1 relative idq = 0.20 a, vds = 28.0 v, f = 175 mhz electrical characteristics (each side) symbol parameter min typ max units test conditions bvdss drain breakdown voltage 65 v ids = 20.00 ma, vgs = 0 v idss zero bias drain current 1.0 ma vds = 28.0 v, vgs = 0 v igss gate leakage current 1 ua vds = 0 v, vgs = 30 v vgs gate bias for drain current 2 5 v ids = 0.10 a, vgs = vds gm forward transconductance 1.2 mho vds = 10 v, vgs = 5 v rdson saturation resistance 0.85 ohm vgs = 20 v, ids = 2.50 a idsat saturation current 7.00 amp vgs = 20 v, vds = 10 v ciss common source input capacitance 50.0 pf vds = 28.0 v, vgs = 0 v, f = 1 mhz crss common source feedback capacitance 3.0 pf vds = 28.0 v, vgs = 0 v, f = 1 mhz coss common source output capacitance 32.0 pf vds = 28.0 v, vgs = 0 v, f = 1 mhz
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, new jersey 07940 united states of america www.americanmicrosemi.com dekra certification inc. as9100c and iso 9001:2008 certificate no. 131519.01 ? 2016 american microsemiconductor, inc. specifications are subject to change without notice ams 701 ams rf devices ams rf devices document page 2 of 2 p out vs p in graph capacitance vs voltage iv curve id & gm vs vgs zin zout package dimensions in inches
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