vssc8l45-m3 www.vishay.com vishay general semiconductor revision: 04-mar-14 1 document number: 87793 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount trench mos barrier schottky rectifier features ? low profile package ? ideal for automated placement ? trench mos schottky technology ? low power losses, high efficiency ? low forward voltage drop ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, freewheeling diodes, dc/dc converters and polari ty protection applications. mechanical data case: do-214ab (smc) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free and rohs-compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end notes (1) units mounted on 3 cm x 3 cm aluminum, 2 oz. pcb (2) free air, mounted on recommended copper pad area primary characteristics i f(av) 8.0 a v rrm 45 v i fsm 140 a v f at i f = 8.0 a (t a = 125 c) 0.39 v t j max. 150 c package do-214ab (smc) diode variation single die do-214ab (smc) tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vssc8l45 unit device marking code 8l45 maximum repetitive pe ak reverse voltage v rrm 45 v maximum dc forward current i f (1) 8.0 a i f (2) 4.9 peak forward surge current 10 ms single ha lf sine-wave ? superimposed on rated load i fsm 140 a operating junction and storage temperature range t j , t stg -40 to +150 c
vssc8l45-m3 www.vishay.com vishay general semiconductor revision: 04-mar-14 2 document number: 87793 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 5 ms notes (1) free air, mounted on recommended pcb 2 oz. pad area; thermal resistance r ? ja - junction to ambient (2) units mounted on 3 cm x 3 cm aluminum , 2 oz. pad area; thermal resistance r ? jm - junction to mount ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 4.0 a t a = 25 c v f (1) 0.42 - v i f = 8.0 a 0.48 0.56 i f = 4.0 a t a = 125 c 0.32 - i f = 8.0 a 0.39 0.48 reverse current v r = 45 v t a = 25 c i r (2) -1.85 ma t a = 125 c 13 40 typical junction capa citance 4.0 v, 1 mhz c j 1216 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vssc8l45 unit typical thermal resistance r ? ja (1) 70 c/w r ? jm (2) 8 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode vssc8l45-m3/57t 0.235 57t 850 7" diam eter plastic tape and reel vssc8l45-m3/9at 0.235 9at 3500 13" diameter plastic tape and reel 0 1 2 3 4 5 6 7 8 9 0 25 50 75 100 125 150 average forward rectified current (a) ambient temperature (c) (d=duty cycle=0.5) mounted on recommended copper pad area (r ja = 70 c/w mounted on al pcb, r jm = 8 c/w 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 1 2 3 4 5 6 7 8 9 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t p t
vssc8l45-m3 www.vishay.com vishay general semiconductor revision: 04-mar-14 3 document number: 87793 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 100 1000 10 000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 1 10 100 0.01 0.1 1 10 100 tran s ient thermal impedance ( c/w) t - pul s e duration ( s ) junction to ambient cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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