1. product profile 1.1 general description 140 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 1805 mhz to 1990 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf per carrier; 5 mhz carrier spacing. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance provid ing excellent thermal stability ? decoupling leads to enable improved video bandwidth () ? designed for broadband operation (1805 mhz to 1990 mhz) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 1805 mhz to 1990 mhz frequency range blf8g20ls-140v; BLF8G20LS-140GV power ldmos transistor rev. 1 ? 7 february 2014 objective data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 1805 to 1880 900 28 35 18 30 ? 30 [1]
blf8g20ls-140v_20ls-140gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 1 ? 7 february 2014 2 of 17 nxp semiconductors blf8g20ls-140(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf8g20ls-140v (sot1244b) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . BLF8G20LS-140GV (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . d d d d d d table 3. ordering information type number package name description version blf8g20ls-140v - earless flanged ceramic package; 6 leads sot1244b BLF8G20LS-140GV - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf8g20ls-140v_20ls-140gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 1 ? 7 february 2014 3 of 17 nxp semiconductors blf8g20ls-140(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g20ls-140v and BLF8G20LS-140GV are capable of withstanding a load mismatch corresponding to vswr = : 1 through all phases under the following conditions: v ds =28 v; i dq =900ma; p l = 140 w (cw); f = 1800 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 35 w k/w table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.8ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 180 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 900 ma 1.6 2 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v -32-a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d =9a - - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =6.3a -0.08- ? table 7. rf characteristics test signal: 2-carrier w-cdma; 3gpp test model 1 with 64 dpch; pa r = 8.4 db at 0.01 % probability on the ccdf; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq = 900 ma; t case =25 ? c; unless otherwise s pecified; in a water cooled ab test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 35 w 18 - db ? d drain efficiency p l(av) =35w 30 - % rl in input return loss p l(av) =35w - ? 10 db acpr 5m adjacent channel power ratio (5 mhz) p l(av) =35w - ? 30 dbc
blf8g20ls-140v_20ls-140gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 1 ? 7 february 2014 4 of 17 nxp semiconductors blf8g20ls-140(g)v power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . table 8. typical impedance measured load-pull data; i dq = 900 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) blf8g20ls-140v 2300 1.71 ? j3.75 1.88 ? j3.16 2400 2.01 ? j4.01 1.67 ? j3.33 2500 2.35 ? j4.08 1.79 ? j3.23 BLF8G20LS-140GV 2300 1.71 ? j5.75 1.67 ? j5.29 2400 2.01 ? j6.01 1.82 ? j5.03 2500 2.35 ? j6.08 1.62 ? j5.08 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h
blf8g20ls-140v_20ls-140gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. objective data sheet rev. 1 ? 7 february 2014 5 of 17 nxp semiconductors blf8g20ls-140(g)v power ldmos transistor 7.3 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] murata or capacitor of same quality. printed-circuit board (pcb): rogers 4350b with a thickness of 0.76 mm. see ta b l e 9 for a list of components. fig 2. component layout table 9. list of components see figure 2 for component layout. component description value remarks c1 multilayer ceramic chip capacitor 1.2 pf [1] atc 800b c2 multilayer cerami c chip capacitor 1 ? f [2] murata c3 multilayer ceramic chip capacitor 100 nf [2] murata c4, c9 multilayer ceramic chip capacitor 12 pf [1] atc 800b c5, c12 multilayer ceramic chip capacitor 20 pf [1] atc 800b c6, c11, c14, c15 multilayer ceramic chip capacitor 220 nf [2] murata c7, c10, c13, c16 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v [2] murata c8 electrolytic capacitor > 470 ? f, 6 3 v r1 chip resistor 4.7 ? , 1%tolerance smd 0805 t1 transistor - nxp blf8g20ls-140v d d d 7 & |