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| v ces = 1200v i c = 81a@ t c = 100c v ce(on) typ. = 1.37v @ 33a g c e gate collector emitter absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified. * qualification standards can be found at http://www.irf.com/ ? low v ce (on) planar igbt technology ? low switching losses ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? lead-free, rohs compliant ? automotive qualified * benefits ? device optimized for soft switching applications ? high efficiency due to low v ce(on) , low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi super-to-220 AUIRGDC0250 e c g c e c g n-channel application ? ptc heater ? relay replacement automotive grade parameter max. units v ce s collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 141 i c @ t c = 100c continuous collector current 81 i cm pulse collector current, v ge = 15v 99 i lm clamped inductive load current, v ge = 20v 99 continuous gate-to-emitter voltage 20 transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 543 p d @ t c = 100c maximum power dissipation 217 t j operating junction and t st g storage temperature range soldering temperature, for 10 sec. (1.6mm from case) 300 thermal resistance parameter min. typ. max. units r qjc (igbt) thermal resistance junction-to-case (igbt) ??? ??? 0.23 r qcs thermal resistance, case-to-sink (flat, greased surface) ??? 0.50 ??? r qja thermal resistance, junction-to-ambient ??? 62 ??? -55 to +150 v w c/w a v ge c form quantity AUIRGDC0250 super-to-220 tube 50 AUIRGDC0250 standard pack complete part number base part number package type notes: v cc = 80% (v ces ), v ge = 20v, l = 400 h, r g = 50 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 78a. note that curren t limitations arising from heating of the device leads may occur with some lead mounting arrangements. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br) ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250 a v (br)ces / t j temperature coeff. of breakdown voltage ? 1.2 ? v/c v ge = 0v, i c = 1ma (25c-150c) ? 1.37 1.57 i c = 33a, v ge = 15v, t j = 25c ?1.45? i c = 33a, v ge = 15v, t j = 150c v ge( th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 250 a v ge(th) / tj threshold voltage temp. coefficient ? -15 ? mv/c v ce = v ge , i c = 250 a (25c - 150c) gfe forward transconductance ? 30 ? s v ce = 50v, i c = 33a, pw = 20 s i ces collector-to-emitter leakage current ? ? 250 v ge = 0v, v ce = 1200v, t j = 25c ? ? 1000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 151 227 i c = 33a q ge gate-to-emitter charge (turn-on) ? 26 39 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 62 93 v cc = 600v i c = 33a, v cc = 600v, v ge = 15v mj r g = 5 , l = 400 h, t j = 25c energy losses include tail t d(off) turn-off delay time ? 485 616 i c = 33a, v cc = 600v, v ge = 15v t f fall time ? 1193 1371 r g = 5 , l = 400 h, t j = 25c i c = 33a, v cc = 600v, v ge = 15v mj r g = 5 , l = 400 h, t j = 150c energy losses include tail t d(off) turn-off delay time ? 689 ? i c = 33a, v cc = 600v, v ge = 15v t f fall time ? 2462 ? r g = 5 , l = 400 h, t j = 150c c ies input capacitance ? 3804 ? v ge = 0v c oes output capacitance ? 161 ? v cc = 30v c res reverse transfer capacitance ? 31 ? f = 1.0mhz t j = 150c, i c = 99a rbsoa reverse bias safe operating area full square v cc rg = 5 , v ge = +20v to 0v conditions ns 29 ? e of f turn-off switching loss 16 ? e of f turn-off switching loss a v pf v ce(on) collector-to-emitter saturation voltage ns 15 ? ! qualification information ? 3l-super-to-220 n/a charged device model class c5 (+/- 2000 v ) (per aec-q101-005) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 800 v ) (per aec-q101-002) human body model class h3a (+/- 6000v ) (per aec-q101-001) " fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 5 - reverse bias soa t j = 150c; v ge = 20v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 4 - typical gate threshold voltage (normalized) vs. junction temperature 25 50 75 100 125 150 t c (c) 0 100 200 300 400 500 600 p t o t ( w ) 25 50 75 100 125 150 t j , temperature (c) 3.0 3.5 4.0 4.5 5.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 1ma 25 50 75 100 125 150 t c (c) 0 20 40 60 80 100 120 140 160 i c ( a ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v fig. 3 - forward soa t c = 25c, t j 150c; v ge =15v 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10 sec 100 sec tc = 25c tj = 150c single pulse dc 1msec fig. 9 - typical v ce vs. v ge t j = -40c fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20 s fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s 5 101520 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a 5 101520 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a 5 101520 v ge (v) 0 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 17a i ce = 33a i ce = 66a 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v vge = 7.0v 4567891011 v ge (v) 0 20 40 60 80 100 i c e ( a ) t j = 25c t j = 150c # fig. 18 - typical gate charge vs. v ge i ce = 33a; l = 2.0mh fig. 13 - typ. energy loss vs. i c t j = 150c; l = 400 h; v ce = 600v, r g = 5 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 400 h; v ce = 600v, r g = 5 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 400 h; v ce = 600v, i ce = 33a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 400 h; v ce = 600v, i ce = 33a; v ge = 15v fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 10203040506070 i c (a) 10 15 20 25 30 35 40 45 50 e n e r g y ( m j ) e off 0 20 40 60 80 i c (a) 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f 0 20406080100 rg ( ) 24 26 28 30 32 e n e r g y ( m j ) e off 0 20 40 60 80 100 r g ( ) 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f 0 100 200 300 400 500 600 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v $ fig 19. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0015 0.000003 0.0365 0.000118 0.1356 0.001438 0.0554 0.006412 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 % fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 -10 0 10 20 30 40 50 60 70 -100 0 100 200 300 400 500 600 700 -2 0 2 4 6 i ce (a) v ce (v) time( s) 90% i ce 5% v ce 10% i ce eoff loss tf 0 1k vcc dut l l rg 80 v dut vcc + - g force c sense 100k dut 0.0075 f d1 22k e force c force e sense l rg vcc dut / driver diode clamp / dut & ' ( ! " # ! $ ! %&% ''&' ('( )&) * + unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure o f the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal a nd regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 date comments ? updated datasheet with ir corporate template. ? removed ic nominal current on page 1. ? updated package outline on page 9. ? updated typo on switch time test condition from "25c" to "150c" on page 2. ? updated bvdss test condition from "100ua" to "250ua" on page 2. ? updated vgeth test condition from "1ma" to "250ua" on page 2. ? updated vgeth temp coefficient test condition from "1ma" to "250ua" and spec from "-12mv/c" to "-15mv/c"on page 2. 3/2/2015 ? removed i ces = 2ua @ vce = 10v on page 2. revision history 9/2/2014 12/1/2014 |
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