ktc3199 transistor (npn) features power dissipation p cm: 400 mw (tamb=25 ) collector current i cm: 150 ma collector-base voltage v (br)cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 50 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 0.1 a dc current gain h fe(1) v ce = 6 v, i c = 2 ma 70 700 collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma 0.1 0.25 v transition frequency f t v ce = 10 v, i c = 1 ma 80 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 2.0 3.5 pf noise figure nf v ce = 6 v, i c = 0.1 ma, f= 1k hz, rg= 10 k ? 1.0 10 db h fe linearity h fe (0.1ma)/h fe (2ma) 0.95 classification of h fe(1) rank o y gr bl range 70-140 120-240 200-400 300-700 TO-92S 1. emitter 2. collector 3. base 123 ktc3199 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
