? semiconductor components industries, llc, 2009 march, 2009 ? rev. 0 1 publication order number: ntp4804n/d ntp4804n power mosfet 30 v, 133 a, single n ? channel, to ? 220 features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these are pb ? free devices* applications ? ac?dc converters ? dc ? dc converters ? low side switching maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 21 a t a = 85 c 13 power dissipation r ja (note 1) t a = 25 c p d 3.0 w continuous drain current r jc t c = 25 c i d 133 a t c = 85 c 85 power dissipation r jc t c = 25 c p d 120 w pulsed drain current t a = 25 c, t p = 10 s i dm 350 a current limited by package t a = 25 c i dmaxpkg 45 a operating junction and storage temperature t j , t stg ? 55 to +175 c source current (body diode) i s 78 a drain to source dv/dt dv/dt 6 v/ns single pulse drain ? to ? source avalanche energy t j = 25 c, v dd = 24 v, v gs = 10 v, i l(pk) = 56 a, l = 0.3 mh, r g = 25 eas 474 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to ? 220ab case 221a style 5 1 2 3 4 n ? channel d s g marking diagram & pin assignment http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package NTP4804NG ayww 1 gate 3 source 4 drain 2 drain see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information v (br)dss r ds(on) max i d max 30 v 4.0 m @ 10 v 133 a 5.5 m @ 4.5 v
ntp4804n http://onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction ? to ? case (drain) r jc 1.25 c/w junction ? to ? ambient ? steady state (note 1) r ja 50 1. surface mounted on fr4 board using 1 in sq pad size, 1 oz cu. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j 21 mv/ c zero gate voltage drain current gate ? to ? source leakage current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 150 c 100 i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.5 v negative threshold temperature coefficient v gs(th) / t j 6.9 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v i d = 30 a 3.3 4.0 m v gs = 4.5 v i d = 30 a 4.4 5.5 i d = 15 a 4.4 5.5 forward transconductance g fs v ds = 15 v, i d = 15 a 22 tbd charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 12 v 4160 pf output capacitance c oss 938 reverse transfer capacitance c rss 455 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 28 40 nc threshold gate charge q g(th) 3.4 gate ? to ? source charge q gs 11.3 gate ? to ? drain charge q gd 11.1 gate resistance r g 0.49 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 18 ns rise time t r 20 turn ? off delay time t d(off) 24 fall time t f 8.0 turn ? on delay time t d(on) v gs = 10 v, v ds = 15 v, i d = 15 a, r g = 3.0 13 ns rise time t r 19.6 turn ? off delay time t d(off) 35.7 fall time tf 7.7 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntp4804n http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.77 1.2 v t j = 150 c 0.57 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = 30 a 34.4 ns charge time t a 18.9 discharge time t b 15.5 reverse recovery charge q rr 29.5 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information order number package shipping NTP4804NG to ? 220 (pb ? free) 50 units / rail
ntp4804n http://onsemi.com 4 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 3 2.5 2 1.5 1 0.5 0 0 25 50 75 125 175 200 225 6 5 4 3 2 0 80 120 figure 3. on ? resistance vs. drain current figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 10 8 7 6 5 0.0030 0.0034 0.0036 0.0038 0.0040 0.0042 135 55 15 95 0 0.003 0.004 0.005 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 100 75 50 25 0 ? 25 ? 50 0.7 0.8 0.9 1.2 1.3 1.4 1.6 30 22 14 10 2 10 1000 100,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 100 10 v 4.5 v v gs = 7, 6, 5.8, 5.5, 5.2, 5 v 4.0 v 3.5 v t j = 25 c 40 160 i d = 30 a t j = 25 c r ds(on) , drain ? to ? source resistance ( ) 0.002 0.001 v gs = 4.5 v t j = 25 c v gs = 10 v 125 150 175 1.0 1.1 1.5 1.7 v gs = 10 v i d = 30 a t j = 100 c t j = 150 c v gs = 0 v 150 35 75 250 0.0044 0.0046 49 100 0.0032 115 155 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c 1 07 200 240 6 5.5 5 4.5 4 3.5 0.0048 0.0050 0.008 0.009 0.010 0.007 0.006 235 195 175 215 255 61826 10,000
ntp4804n http://onsemi.com 5 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge gate ? to ? source or drain ? to ? source voltage (v) q g , total gate charge (nc) 15 10 5 0 5 10 0 1000 2000 3000 0 0 5 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 1 10 1000 0.7 0.5 1.0 0.8 0.6 0.4 0 10 30 20 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) 30 20 25 t j = 25 c v gs = 0 v c iss c oss c rss 10 v ds , drain ? to ? source voltage (v) 0 10 20 t j = 25 c i d = 30 a v gs v ds qt v dd = 15 v i d = 15 a v gs = 10 v t d(off) t d(on) t r t j = 25 c v gs = 0 v t f vds vgs 20 25 100 0.9 4000 5000 6000 q gs q gd 515 30 40 60 50
ntp4804n http://onsemi.com 6 package dimensions to ? 220, single gauge case 221ab ? 01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.020 0.055 0.508 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 5: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ntp4804n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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