2013. 8. 27 1/8 semiconductor technical data KGT30N135NDH revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features h high speed switching h high ruggedness, temperature stable behavior h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 1350 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 60 a @tc=100 ? 30 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 30 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 250 w @tc=100 ? 100 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 0.5 ? /w thermal resistance, junction to case (diode) r thjc 2.0 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g
2013. 8. 27 2/8 KGT30N135NDH revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1350 - - v collector cut-off current i ces v ge =0v, v ce =1350v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =30ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =30a - 1.9 2.25 v v ge =15v, i c =30a, t c = 125 ? - 2.2 - v v ge =15v, i c =60a - 2.4 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 30a - 160 - nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 60 - nc turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 45 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 230 - ns fall time t f - 100 - ns turn-on switching loss e on - 4.5 - mj turn-off switching loss e off - 1.3 - mj total switching loss e ts - 5.8 - mj turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 45 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 240 - ns fall time t f - 210 - ns turn-on switching loss e on - 5.3 - mj turn-off switching loss e off - 2.2 - mj total switching loss e ts - 7.5 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3000 - pf ouput capacitance c oes - 120 - pf reverse transfer capacitance c res - 85 - pf
2013. 8. 27 3/8 KGT30N135NDH revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 30a t c =25 ? - 1.9 2.5 v t c =125 ? - 2.05 - diode reverse recovery time t rr i f = 30a di/dt = 200a/ s t c =25 ? - 250 330 ns t c =125 ? - 320 - diode peak reverse recovery current i rr t c =25 ? - 29 35 a t c =125 ? - 33 - diode reverse recovery charge q rr t c =25 ? - 3200 4700 nc t c =125 ? - 4750 -
2013. 8. 27 4/8 KGT30N135NDH revision no : 0 typical performance characteristics
2013. 8. 27 5/8 KGT30N135NDH revision no : 0 typical performance characteristics (continued)
2013. 8. 27 6/8 KGT30N135NDH revision no : 0 typical performance characteristics (continued)
2013. 8. 27 7/8 KGT30N135NDH revision no : 0 typical performance characteristics
2013. 8. 27 8/8 KGT30N135NDH revision no : 0 definition switching time & loss.
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