2013. 7. 15 1/8 semiconductor technical data KGT30N135KDH revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features h high speed switching h high ruggedness, temperature stable behavior h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 1350 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 60 a @tc=100 ? 30 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 30 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 250 w @tc=100 ? 100 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 0.5 ? /w thermal resistance, junction to case (diode) r thjc 2.0 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g a millimeters dim b c d e f g h i j k o q m max. 4.50 r s 15.90 0.30 + _ 5.00 0.20 + _ 20.85 0.30 + _ 3.00 0.20 + _ 2.00 0.20 + _ 1.20 0.20 + _ 20.10 0.70 + _ 0.60 0.02 + _ 2.00 0.10 + _ 14.70 0.20 + _ 2.40 0.20 + _ p 5.45 0.30 + _ 3.60 0.30 + _ 3.60 0.20 + _ 7.19 0.10 + _ h c s m k b i 123 o j d e f pp g to-247 a
2 2 device mark 2 3 3 lot no. device mark 1 1 1 kgt 30n135kdh 025 2013. 7. 15 2/8 KGT30N135KDH revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1350 - - v collector cut-off current i ces v ge =0v, v ce =1350v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =30ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =30a - 1.9 2.25 v v ge =15v, i c =30a, t c = 125 ? - 2.2 - v v ge =15v, i c =60a - 2.4 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 30a - 160 - nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 60 - nc turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v,r g =10 ? inductive load, t c = 25 ? (note 1) - 45 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 230 - ns fall time t f - 100 - ns turn-on switching loss e on - 4.5 - mj turn-off switching loss e off - 1.3 - mj total switching loss e ts - 5.8 - mj turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v, r g =10 ? inductive load, t c = 125 ? (note 1) - 45 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 240 - ns fall time t f - 210 - ns turn-on switching loss e on - 5.3 - mj turn-off switching loss e off - 2.2 - mj total switching loss e ts - 7.5 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3000 - pf ouput capacitance c oes - 120 - pf reverse transfer capacitance c res - 85 - pf marking note 1 : energy loss include tail current and diode reverse recovery.
2013. 7. 15 3/8 KGT30N135KDH revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 30a t c =25 ? - 1.9 2.5 v t c =125 ? - 2.05 - diode reverse recovery time t rr i f = 30a di/dt = 200a/ s t c =25 ? - 250 330 ns t c =125 ? - 320 - diode peak reverse recovery current i rr t c =25 ? - 29 35 a t c =125 ? - 33 - diode reverse recovery charge q rr t c =25 ? - 3200 4700 nc t c =125 ? - 4750 -
2013. 7. 15 4/8 KGT30N135KDH revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 45 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 18 16 10 14 12 4 8 6 2 08 20 41216 0246810 0 20 40 60 80 100 120 140 160 180 20 30 10 60 70 80 40 50 0 25 50 2.0 1.0 1.5 2.5 4.0 3.0 75 100 125 case temperature t c ( ) c 11040 capacitance (pf) 0 3000 4000 6000 5000 1000 2000 common emitter v ge = 15v t c = t c = fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 25 c 125 c common emitter v ge = 15v 15v 13v 7v 8v 10v i c = 30a 60a common emitter t c = 25 c i c = 15a 30a 50a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 18 10 14 12 4 2 8 6 08 20 41216 common emitter t c = 125 c common emitter v ge = 0v, f = 1mhz t c = 25 c i c = 15a 30a 50a ciss coss crss 6v t c =25 c common emitter typical performance characteristics
2013. 7. 15 5/8 KGT30N135KDH revision no : 0 collector current i c ( ) switching time (ns) 02040 30 50 100 10 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 010 30 20 40 50 0.1 10 1 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c fig 12. switching loss vs. collector current eoff eon fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0 204060 10 30 50 70 10 100 200 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c tr td(on) 020406080 10 100 1000 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 70 0.1 1 10 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c 02040 10 30 50 10 100 1000 tf td(off) eon eoff typical performance characteristics (continued)
2013. 7. 15 6/8 KGT30N135KDH revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 0 80 160 40 120 60 140 20 100 200 180 0 2 4 6 8 10 12 14 16 common emitter i c = 30 t c = 25 c turn-off safe operating area v ge = 15v, t c = 125 c fig 14. soa characteristics 1 100 10 1000 1 10 100 1000 fig 15. turn-off soa fig 16. transient thermal impedance of igbt 400v 600v vcc = 200v rectan g ular pulse duration ( sec ) 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal resistance (zthjc) 0.010 0.100 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) 10 1 0.01 0.1 1 0.1 100 1000 10 100 1000 0.01 0 .02 0.1 0.2 0.5 0.05 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c dc operation 10ms 200 s 50 s 1ms single pluse typical performance characteristics (continued)
2013. 7. 15 7/8 KGT30N135KDH revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 01020 515 30 25 0 20 25 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=100a/ s di/dt=200a/ s 01020 515 30 25 0 400 300 100 200 0 0.4 1.2 1.6 2.0 0.8 2.4 0.1 10 50 1 t c = t c = 25 c 125 c t c = 25 c t c = 125 c di/dt=200a/ s di/dt=100a/ s typical performance characteristics
2013. 7. 15 8/8 KGT30N135KDH revision no : 0 fig 20. switching test circuit fig 21. definition switching time & loss fig 22. definition diode switching time definition switching time & loss.
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