pnp silicon planar medium power high current transistor issue 3 ? june 94 features * 4.5 amps continuous current * up to 20 amps peak current * very low saturation voltage * excellent gain up to 20 amps * very low leakage * exceptional gain linearity down to 10ma * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v peak pulse current i cm -20 a continuous collector current i c -4.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :tstg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 -80 v i c =-100 m a collector-emitter breakdown voltag v (br)cer -50 -80 v ic=-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -30 -45 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-40v v cb =-40v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-40v v cb =-40v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -40 -80 -100 -240 -60 -100 -160 -320 mv mv mv mv i c =-0.5a, i b =-20ma* i c =-1a, i b =-20ma* i c =-2a, i b =-200ma* i c =-5a, i b =-300ma* base-emitter saturation voltage v be(sat) -960 -1100 mv i c =-5a, i b =-300ma* e-line to92 compatible ZTX949 3-312 c b e ZTX949 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) -860 -1000 mv ic=-5a, v ce =-1v* static forward current transfer ratio h fe 100 100 75 200 200 140 35 300 i c =-10ma, v ce =-1v i c =-1a, v ce =-1v* i c =-5a, v ce =-1v* i c =-20a, v ce =-1v* transition frequency f t 100 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 122 pf v cb =-10v, f=1mhz switching times t on t off 120 130 ns ns i c =-4a, i b1 =-400ma i b2 =400ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w 3-313
pnp silicon planar medium power high current transistor issue 3 ? june 94 features * 4.5 amps continuous current * up to 20 amps peak current * very low saturation voltage * excellent gain up to 20 amps * very low leakage * exceptional gain linearity down to 10ma * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -6 v peak pulse current i cm -20 a continuous collector current i c -4.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :tstg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 -80 v i c =-100 m a collector-emitter breakdown voltag v (br)cer -50 -80 v ic=-1 m a, rb 1k w collector-emitter breakdown voltage v (br)ceo -30 -45 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-40v v cb =-40v, t amb =100c collector cut-off current i cer r 1k w -50 -1 na m a v cb =-40v v cb =-40v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -40 -80 -100 -240 -60 -100 -160 -320 mv mv mv mv i c =-0.5a, i b =-20ma* i c =-1a, i b =-20ma* i c =-2a, i b =-200ma* i c =-5a, i b =-300ma* base-emitter saturation voltage v be(sat) -960 -1100 mv i c =-5a, i b =-300ma* e-line to92 compatible ZTX949 3-312 c b e ZTX949 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. base-emitter turn-on voltage v be(on) -860 -1000 mv ic=-5a, v ce =-1v* static forward current transfer ratio h fe 100 100 75 200 200 140 35 300 i c =-10ma, v ce =-1v i c =-1a, v ce =-1v* i c =-5a, v ce =-1v* i c =-20a, v ce =-1v* transition frequency f t 100 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 122 pf v cb =-10v, f=1mhz switching times t on t off 120 130 ns ns i c =-4a, i b1 =-400ma i b2 =400ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w 3-313
-55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) t amb =25c v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) -55c +25c +175c -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - no r mal ised ga i n v be ( sa t ) - (v olts) v be - (v olts) i c - co l le c to r cur r e nt ( am ps) i c /i b =10 i c /i b =10 i c /i b =50 i c /i b =10 v ce =1v v ce =1v 300 200 100 h fe - typical gain v ce - collector voltage (volts) safe operating area 0.1 100 110 0.1 1 10 100 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.001 0.001 0.001 0.001 0.001 ZTX949 3-314
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