inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD835 description high dc current gain- : h fe = 400(min) @i c = 4a low collector saturation voltage- : v ce(sat) = 1.5v(max.) @ i c = 4a applications electronic ignitor relay& solenoid drivers motor controls switching regulators absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo(sus) collector-emitter voltage 350 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 15 v i c collector current-continuous 6 a i b b base current-continuous 0.3 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -45~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD835 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 1a; i b = 0 b 350 v v (br)ceo collector-emitter breakdown voltage i c = 0.1ma; i b = 0 b 400 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 100ma; i c = 0 15 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 10ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 10ma b 2.0 v i cbo collector cutoff current v cb = 400v; i e =0 0.1 ma i ebo emitter cutoff current v eb = 15v; i c =0 100 ma h fe dc current gain i c = 4a; v ce = 1.5v 400 switching times t on turn-on time 1.0 s t stg storage time 12.0 s t f fall time i c = 4a, i b1 =-i b2 = 40ma, r l = 10 ; pw = 20 s, dutycycle 2% 6.0 s isc website www.iscsemi.cn 2
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