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cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 1 /13 mtb20c06k q8 cyste k product specification n - and p - channel enhancement mode mosfet mtb20c06k q8 description the mtb20c06k q8 consists of a n - channel and a p - channel enhancement - mode mos fet in a single sop - 8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost - effectiveness. the sop - 8 package is universally preferred for all commercial - industrial surface mount applications. features ? simple drive requirement ? low on - resistance ? fast switching speed ? esd protected gate ? common drain stru c ture ? pb - free lead plating and halogen - free package o rdering inf ormation device package shipping MTB20C06KQ8 - 0 - t3 - g sop - 8 (pb - free lead plating & halogen - free package) 25 00 pcs / tape & reel n - ch p - ch bv dss 60v - 60v i d @v gs =10v( - 10v) 6a - 5a r dson(typ.) @v gs =10v( - 10v) 18.1 m 27.9m r dson(typ.) @v gs =4.5v( - 4.5v) 20.5m 41.4m r dson(typ.) @v gs =4v( - 4v) 21.7m 47.8m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 2 /13 mtb20c06k q8 cyste k product specification equivalent circuit outline absolute maximum ratings (t a =25 ? c , unless otherwise noted ) parameter symbol limits unit n - channel p - channel drain - sour c e breakdown voltage bv dss 60 - 60 v gate - source volta ge v gs 20 20 continuous drain current (note 2) t a =25 ? c , v gs =10v ( - 10v) i d 6 - 5 a t a =70 ? c , v gs =10v ( - 10v) 4.8 - 4 pulsed drain current (note 1) i dm 30 - 20 power dissipation for dual operation p d 2 w power dissipation for single operation 1.6 (note 2) 0.9 (note 3) operating junction and storage temperature range tj ; tstg - 55~+150 ? c thermal data parameter symbol value unit thermal resistance, junction - to - case, ma x r th,j - c 10 ? c /w thermal resistance, junction - to - ambient, max r th,j - a 78 (note 2) 135 (note 3) note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in 2 copper pad of fr - 4 board, pulse width 10s. 3.surface mounted on minimum copper pad, pulse width 10s. mtb20c06k q8 so p - 8 g gate s sour c e d drain
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 3 /13 mtb20c06k q8 cyste k product specification n - channel electrical characteristics (t c =25 ? c , unless otherwise specified ) symbol min. typ. max. unit test conditions static bv dss 6 0 - - v v gs =0v, i d = 25 0 a v gs(th) 1 .0 - 2.5 v ds =v gs , i d = 25 0 a i gss - - 10 a v gs = 16 v , v ds =0v i dss - - 1 v ds =60v, v gs =0v - - 25 v ds =48v, v gs =0v, tj=85 ? c * r ds(on) - 18.1 23.5 m ? i d = 6 a , v gs = 10 v - 20.5 26.6 i d = 4 a , v gs =4. 5 v - 21.7 28.5 i d = 3 a , v gs =4v * g fs - 15 - s v ds = 5 v , i d =6a dynamic ciss - 73 6 - pf v ds =20v, v gs =0, f=1mhz coss - 140 - crss - 69.7 - * td (on) - 8.6 - ns v d s = 30 v, i d =1a, v gs =10v, r g = 6 * tr - 17.6 - * td (off) - 39.8 - * tf - 20 - * qg - 17.5 - nc v ds = 48 v, i d = 6 a, v gs = 10 v * qgs - 1.7 - * qgd - 5.9 - body diode *i s - - 6 a *i sm - - 24 * v sd - 0.8 1. 2 v v gs= 0v, i s = 6 a *trr - 13.9 - ns i f =2a, di f /dt=100a/ s *qrr - 8.9 - nc *pulse test : pulse width ? 3 0 0s, duty cycle ? 2% p - channel electrical characteristics (t c =25 ? c , unless otherwise specified ) symbol min. typ. max. unit test conditions static bv dss - 6 0 - - v v gs =0v, i d = - 25 0 a v gs(th) - 1 .0 - - 2.5 v ds =v gs , i d = - 25 0 a i gss - - 10 a v gs = 16 v , v ds =0v i dss - - - 1 v ds = - 60v, v gs =0v - - - 25 v ds = - 48v, v gs =0v, tj=85 ? c * r ds(on) - 27.9 36.5 m ? i d = - 5 a , v gs = - 1 0 v - 41.4 54.0 i d = - 4 a , v gs = - 4. 5 v - 47.8 62.5 i d = - 3 a , v gs = - 4v * g fs - 13 - s v ds = - 5 v , i d = - 5a
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 4 /13 mtb20c06k q8 cyste k product specification dynamic ciss - 1453 - pf v ds = - 20v, v gs =0, f=1mhz coss - 218 - crss - 120 - * td (on) - 14 - ns v d s = - 30 v, i d = - 1a, v gs = - 10v, r g = 6 * tr - 18.8 - * td (o ff) - 68.2 - * tf - 66.2 - * qg - 28.5 - nc v ds = - 48 v, i d = - 5 a, v gs = - 10 v * qgs - 4.9 - * qgd - 8.4 - body diode *i s - - - 5 a *i sm - - - 20 * v sd - - 0.79 - 1. 2 v v gs =0v, i s = - 5 a *trr - 14.9 - ns i f =2a, di f /dt=100a/ s *qrr - 8.3 - nc *pulse tes t : pulse width ? 3 0 0s, duty cycle ? 2% recommended soldering footprint
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 5 /13 mtb20c06k q8 cyste k product specification typical characteristics : q1( n - channel ) typical output characteristics 0 4 8 12 16 20 24 0 1 2 3 4 5 v ds , drain-source voltage(v) i d , drain current(a) v gs =3v 3.5 v 10v, 9v, 8v, 7v, 6v, 5v, 4.5v, 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =6a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =6a r ds(on) @tj=25c : 18.1m typ.
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 6 /13 mtb20c06k q8 cyste k product specification typical characteristics(cont.) : q1( n - channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =6a v ds =15v v ds =48v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds(on) limit t a =25c, tj=150c, v gs =10v r ja =78c/w,single pulse 1s 100m maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maxim um drain current(a) t a =25c, v gs =10v r ja =78c/w
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 7 /13 mtb20c06k q8 cyste k product specification typical characteristics(cont.) : q1( n - channel) typical transfer characteristics 0 4 8 12 16 20 24 0 2 4 6 8 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 8 /13 mtb20c06k q8 cyste k product specification typical c haracteristics : q2( p - channel) typical output characteristics 0 4 8 12 16 20 0 1 2 3 4 5 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v,-6v, -5v v gs =-3v -3.5v -4v -4.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds( on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-10v v gs =-4v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 -i s , source drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-5a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-5a r ds(on) @tj=25c : 27.9m typ.
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 9 /13 mtb20c06k q8 cyste k product specification typical characteristics(cont.) : q2(p - channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(t h) , threshold voltage(v) i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.1 1 10 100 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-5v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-5a v ds =-30v v ds =-48v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=150c, v gs =-10v r ja =78c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 t j , junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =78c/w
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 10 /13 mtb20c06k q8 cyste k product specification typical characteristics(cont.) : q2(p - channel) typical transfer characteristics 0 4 8 12 16 20 0 2 4 6 8 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 11 /13 mtb20c06k q8 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 12 /13 mtb20c06k q8 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eute ctic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 105 q8 issued date : 20 15.07.09 revised date : page no. : 13 /13 mtb20c06k q8 cyste k product specification so p - 8 dimension *: typical dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0 118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0. 30 0. 50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1 .65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any que stion with packing specification or packing method, please contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are res erved. reproduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: 8 - lead so p - 8 plastic package cystek package code: q 8 date code device name b20c 06k top view a b front view f c d e g part a i h j k o m l n right side view part a

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