j , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf line npn silicon rf power transistor designed for 24 volt uhf large-signal, common emitter, class-ab linear amplifier applications in industrial and commercial fm/am equipment operating in the range 800-970 mhz. ? specified 24 volt, 900 mhz characteristics output power = 30 watts minimum gain = 10.5 db @ 900 mhz, class-ab minimum efficiency = 30% @ 900 mhz, 30 watts (pep) maximum intermodulation distortion -30 dbc @ 30 watts (pep) ? characterized with series equivalent large-signal parameters from 800 to 960 mhz ? silicon nitride passivated ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr @ 26 vdc, and rated output power ? gold metalized, emitter ballasted for long life and resistance to metal- migration mrf897r sow, 900 mhz rf power transistor npn silicon ?y case395e-01 maximum ratings thermal characteristics off characteristics on characteristics rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector-current ? continuous total device dissipation @ tc = 25c derate above 25c storage temperature range symbol vceo vces vebo ig pd tstg value 30 60 4.0 4.0 105 0.60 -65 to +150 unit vdc vdc vdc adc watts w/c c characteristic thermal resistance, junction to case symbol rfljc max 1.67 unit c/w electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol | min typ max unit collector-emitter breakdown voltage (lc = 50 madc, ib = 0) collector-emitter breakdown voltage (lc = 50 madc, vbe = 0) emitter-base breakdown voltage (ie = 5 madc, lc = 0) collector cutoff current (vce = 30 vdc, vbe = 0, tc = 25c) v(br)ceo v(br)ces v(br)ebo 'ces 30 60 4.0 ? 33 80 4.7 ? ? ? ? 10.0 vdc vdc vdc madc ounfitv dc current gain (ice = 1 -0 adc, vce = 5 vdc) hfe 30 80 120 ? dynamic characteristics output capacitance (vcb = 24 vdc, ie = 0, f = 1 .0 mhz) cob 14 21 28 pf
electrical characteristics ? continued (tc = 25c unless otherwise noted) characteristic symbol min typ max unit functional characteristics common-emitter amplifier power gain (vcc = 24 vdc, pout = 30 watts (pep), lcq = 125 ma, ^ = 900 mhz, f2 = 900.1 mhz) collector efficiency (vcc = 24 vdc, pou, = 30 watts (pep), lcq = 125 ma, f, = 900 mhz, f2 = 900.1 mhz) intermodulation distortion (vcc = 24 vdc, pou, = 30 watts (pep), lcq = 125 ma, f., = 900 mhz. f2 = 900.1 mhz) output mismatch stress (vcc = 26 vdc, pout = 30 watts (pep), lcq = 125 ma, f, = 900 mhz, \ = 900.1 mhz, load vswr = 5:1 (all phase angles)) gpe n imd 10.5 30 12.0 38 -37 ~ -30 db % dbc no degradation in output power r3 c4 tl7 ^23l-? xt -pc20 - l-| tl11 | q <^- output j__ c24 r-fa r-f^ i ^hh-t 1 tl10 x coax 2 c19 r6 *cc b1, b2, b3, b4 ? short ferrite bead, fair rite #2743019447 c1 ? 0.8-8.0 pf var capacitor, johansen gigatrim c2, c3, c23, c24 ? 43 pf, 100 mil, atc chip capacitor c4, c5, c21, c22 ? 1000 pf, 100 mil, atc chip capacitor c6, c7, c11, c12? 10 jif, electrolytic capacitor, panasonic c8, c9, c16, c17 ? 100 pf, 100 mil, atc chip capacitor c10 ? 9.1 pf, 50 mil, atc chip capacitor c13 ? 250 nf electrolytic capacitor, mallory c14, c18, c19, c25 ? 0.1 uf, chip capacitor, kemet c15 ? 1.1 pf, 50 mil, atc chip capacitor c20 ? 6.8 pf, 100 mil, atc chip capacitor l1, l2, l3, l4, l5, l6, l7, l8 ? 5 turns 20 awg, idia 0.126" choke, taylor spring 46 nh n1, n2 ? type n flange mount, omni spectra 3052-1648-10 q1 ? bias transistor bd136 pnp r1, r12 ? 27 ohm, 2.0 w r3, r4, r5, r6 ? 4.0 x 39 ohm, 1/8 w, chips resistors in parallel, rohm 390-j sb1 ? 0.15" x 0.3" x 0.03" cu tl1-tl11 ? microstrip line, see photomaster balunl, balun2, coax 1, coax 2 ? 2.20" 50 ohm, 0.086" o.d. semi-rigid coax, micro coax ut-85-m17 circuit board ? 1/32" glass teflon, arlon gx-0300-55-22, er = 2.55 figure 1. 840-900 mhz test circuit schematic
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