high-voltage npn silicon transistor . . . designed for mediumtohigh voltage inverters, converters, regulators and switching circuits. ? high voltage e v cex = 400 vdc ? gain specified to 3.5 amp ? high frequency response to 2.5 mhz ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? collectoremitter voltage ????? v cex ?????? 400 ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 400 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 5.0 ??? ??? vdc ???????????? ???????????? collector current e continuous ????? ????? i c ?????? ?????? 10 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 2.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 125 1.0 ??? ? ? ? ??? watts w/ c ???????????? ???????????? operating junction temperature range ????? ????? t j ?????? ?????? 65 to +150 ??? ??? c ???????????? ???????????? storage temperature range ????? ????? t stg ?????? ?????? 65 to +200 ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.0 ??? ??? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ????? ????? symbol ???? ???? min ???? ???? max ???? ???? unit ????????????????????????????????? ????????????????????????????????? off characteristics ???????????????????? ???????????????????? collectoremitter sustaining voltage* (1) (i c = 100 madc, i b = 0) ????? ????? v (br)ceo(sus) ???? ???? 325 ???? ???? e ???? ???? vdc ???????????????????? ? ?????????????????? ? ???????????????????? collector cutoff current (v ce = 400 vdc, v eb(off) = 1.5 vdc) (v ce = 400 vdc, v eb(off) = 1.5 vdc, t c = 125 c) ????? ???? ? ????? i cex ???? ? ?? ? ???? e e ???? ? ?? ? ???? 0.25 0.5 ???? ? ?? ? ???? madc ???????????????????? ???????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ???? ???? e ???? ???? 5.0 ???? ???? madc ????????????????????????????????? ????????????????????????????????? on characteristics ???????????????????? ? ?????????????????? ? ? ?????????????????? ? ???????????????????? dc current gain(1) (i c = 1.0 adc, v ce = 5.0 vdc) (i c = 2.5 adc, v ce = 5.0 vdc) ????? ???? ? ???? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 30 10 ???? ? ?? ? ? ?? ? ???? 90 e ???? ? ?? ? ? ?? ? ???? e ???????????????????? ???????????????????? collectoremitter saturation voltage (1) (i c = 1.0 adc, i b 0.10 adc) ????? ????? v ce(sat) ???? ???? e ???? ???? 0.8 ???? ???? vdc ???????????????????? ? ?????????????????? ? ???????????????????? baseemitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) ????? ???? ? ????? v be(sat) ???? ? ?? ? ???? e ???? ? ?? ? ???? 1.25 ???? ? ?? ? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????????????? ???????????????????? currentgain e bandwidth product (i c = 200 madc, v ce = 10 vdc, f = 1.0 mhz) ????? ????? f t ???? ???? 2.5 ???? ???? e ???? ???? mhz (1) pw 300 m s duty cycle 2.0%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: mj423/d mj423 10 ampere power transistor npn silicon 400 volts 125 watts case 107 to204aa (to3)
mj423 http://onsemi.com 2 i c , collector current (amps) i c , collector current (ma) i c , collector current (amp) 100 0.1 i c , collector current (amp) 1.0 70 1.0 t j = 100 c 1.0 v ce , collector-emitter voltage (volts) 6.0 200 1.0 0.1 100 125 t c , case temperature ( c) 100 100 50 75 25 0 figure 1. activeregion safeoperating area figure 2. powertemperature derating curve figure 3. sustaining voltage test load line figure 4. sustaining voltage test circuit 10 0.01 2.0 4.0 1000 0.2 0.3 0.5 0.7 2.0 3.0 5.0 v ce = 5.0 v 25 c 0 20 40 60 80 120 180 200 100 m s 1.0 ms dc 0 500 v ceo(sus) is acceptable when v ce 325 v at i c = 100 ma 400 200 100 v ce , collector-emitter voltage (volts) figure 5. current gain 500 300 0 400 300 200 100 200 w + - + - 6.0 v 50 v to scope x y 1.0 w 300 w h g relay 50 mhy 10 60 20 40 400 secondary breakdown limitation thermal limitation at t c = 25 c (base-emitter dissipation is perceptible above i c 5 amp) the safe operating area curves indi- cate i c v ce limits below which the de- vice will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to in- sure operation below the maximum t j , power temperature derating must be ob- served for both steady state and pulse power conditions. p d , power dissipation (watts) 140 160 7.0 50 30 20 10 7.0 5.0 3.0 2.0 10 0 v be , base-emitter voltage (volts) 1.0 7.0 0.1 0.5 1.5 2.0 v ce = 10 v figure 6. transconductance 2.5 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 h fe , dc current gain t j = 150 c 10 25 c t j = 100 c
mj423 http://onsemi.com 3 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (to3) issue z
mj423 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj423/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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