v rrm = 20 v - 40 v i f(av) = 800 a features ? high surge capability heavy three tower package ? electrically isolated base plate ? not esd sensitive parameter symbol MBRTA80020(r) mbrta80030(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v ? isolation type package ? types from 20 v to 40 v v rrm maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) MBRTA80020 thru mbrta80040r mbrta80040(r) 35 25 mbrta80035(r) silicon power schottk y diode conditions 40 28 dc blocking voltage v dc 20 30 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol MBRTA80020(r) mbrta80030(r) unit average forward current (per pkg) i f(av) 800 800 a maximum instantaneous forward voltage (per leg) 0.72 0.72 11 10 10 50 50 thermal characteristics thermal resistance, junction - case (per leg) r jc 0.25 0.25 c/w ma v t c = 100 c 800 800 6000 6000 a peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 6000 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r t j = 25 c i fm = 400 a, t j = 25 c conditions -55 to 150 v f mbrta80040(r) 11 mbrta80035(r) 0.25 t j = 150 c 0.25 0.72 0.72 50 50 6000 t j = 100 c 10 10 -55 to 150 -55 to 150 40 35 -55 to 150 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
MBRTA80020 thru mbrta80040r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MBRTA80020 thru mbrta80040r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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