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| IRFP250MPBF hexfet ? power mosfet 03/01/10 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 30 i d @ t c = 100c continuous drain current, v gs @ 10v 21 a i dm pulsed drain current 120 p d @t c = 25c power dissipation 214 w linear derating factor 1.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 315 mj i ar avalanche current 30 a e ar repetitive avalanche energy 21 mj dv/dt peak diode recovery dv/dt 8.6 v/ns t j operating junction and -55 to +175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.7 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance www.irf.com 1 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of to-220 devices. the to-247 is similar but superior to the earlier to-218 package because of its isolated mounting hole. description v dss = 200v r ds(on) = 0.075 ? i d = 30a s d g advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated ease of paralleling simple drive requirements to-247ac pd - 96292 lead-free
IRFP250MPBF 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curre nt integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 18a, v gs = 0v t rr reverse recovery time ??? 186 279 ns t j = 25c, i f = 18a q rr reverse recovery charge ??? 1.3 2.0 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 30 120 a starting t j = 25c, l = 1.9mh r g = 25 ? , i as = 18a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) 18a di/d 374a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.26 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.075 ? v gs = 10v, i d = 18a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 17 ??? ??? s v ds = 50v, i d = 18a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 123 i d = 18a q gs gate-to-source charge ??? ??? 21 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? ??? 57 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 14 ??? v dd = 100v t r rise time ??? 43 ??? i d = 18a t d(off) turn-off delay time ??? 41 ??? r g = 3.9 ? t f fall time ??? 33 ??? r d = 5.5 ? , see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 2159 ??? v gs = 0v c oss output capacitance ??? 315 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 83 ??? ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current IRFP250MPBF www.irf.com 3 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 30a IRFP250MPBF 4 www.irf.com ! ! 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms "# $ ! ! 1 10 100 1000 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 0 4 8 12 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 18a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j IRFP250MPBF www.irf.com 5 "# v ds 90% 10% v gs t d(on) t r t d(off) t f %& "# ' & ()* 1 0.1 % + - 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d "# v ds 90% 10% v gs t d(on) t r t d(off) t f %& "# ' & ()* 1 0.1 % 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRFP250MPBF 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& .( &%& .( & t p v (br)dss i as "# $& ' r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 7.3a 13a 18a IRFP250MPBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /'0 ' 1 ? ? ! ? " # $$ ? % &" "& ? '( " ? )" * ? ' + " &" 1 IRFP250MPBF 8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/2010 !" #$%& ##%&' ( ) *+,-, .( ( / ) # % &0&1 |
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