cha5014 - 99f rohs compliant ref. : dscha50141097 - 07 apr 11 1 / 8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dparteme ntale 128 - b.p.46 - 91401 orsay cedex france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 x band hbt driver amplifier gaas monolithic microwave ic description the cha5014 chip is a monolithic two - stage medium power amplifier d esigned for x band applications. moreover this amplifier is relevant for systems that require an output power weakl y sensitive to temperature. this device is manufactured using a gainp hbt process, including, via holes through the substrate and air bridges. a nitride layer protects the transistors and the passive components. a s pecial control circuit is implemented to s tabilize the output pow er in te mpera ture . main features 30dbm saturated o utput power temperature compensated output power two biasing modes: - digital control thanks to ttl interface - analog control thanks to biasing circuit quiescent bias p oint: 8.5 v@230ma chip size: 2.87 x 1.37 x 0.1 mm 3 pout & pae @ 1dbc and linear gain (tamb 20c) main characteristics tamb = +20c , vc = +8.5 v (pulse 100s 20%) symbol parameter min typ max unit fop operating frequency range 8.5 11 ghz g smal l signal gain 20 db p1db output power at 1db gain compression 29 dbm icq power supply quiescent current 230 ma esd protections: electrostatic discharge sensitive device observe handling precautions!
cha5014 - 99f x band driver amplifier ref. : dscha50141097 - 07 apr 11 2 / 8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 electrical characteristics vc = +8.5 v (pulse 1 00 s 20 %) symbol parameter min typ max unit top operating temperature range - 40 80 c fop operating frequency range 8.5 11 ghz g small signal gain at 20c 20 db g small signal gain flatness at 20c 0.25 db g_t linear gain variation vs temperature - 0.03 db/c p1db output power at 1db gain compression 29 dbm p sat saturated o utput power 30 dbm pae_1dbc pae at 1db gain compression at 20c 35 % dbs11 input retur n loss - 12 db dbs22 output return loss - 12 db vc power supply voltage 8.5 v icq power supply quiescent current (1) 230 ma ic_ 1dbc consumption under 1db gain compression 260 ma vctrl collector current control voltage 5 v ictrl biasing ci rcuit consumption 5 ma ti_low ttl input voltage low level 0 0.4 v ti_high ttl input voltage high level (1 ) 2.5 7 .0 v i_ti ttl input current 1 ma (1) for vc = 8.5 v, t tl interface settles icq to 230 ma when ti=ti_high . if needed, icq can be tuned thank s to vctrl if the analog biasing circuit is used. absolute maximum ratings (2) tamb = 20c symbol parameter values unit cmp compression level (3) 6 db vc power supply voltage (4) 10 v icq power supply quiescent current 320 ma ic_sat power supply curr ent in saturation 370 ma vctrl collector current control voltage 6 v ai ctrl voltage (ti _ low, ti _high) - 2 , +8 v tj maximum junction temperature (5) 175 c tstg storage temperature range - 55 to +150 c (2) operation of this device above anyone of these pa rameters may cause permanent damage. (3) for higher compression the level limit can be increased by decreasing th e voltage vc using the rate 0.5v/ dbc . compression level shall not be higher than 3db at - 40c. (4) without rf input power (5) equivalent thermal resistance to backside : 45c/w
x band driver amplifier cha5 014 - 99f ref. : dscha50141097 - 07 apr 11 3 / 8 specifications subject to change without notice route dpartem entale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical measurement characteristics tamb = 20c, vc = 8.5 v, ic (quiescent) = 230ma pulse = 100 s 20 % linear gain versus frequency and temperature output power @ 1db gain compression versus frequency and temperature
cha5014 - 99f x band driver amplifier ref. : dscha50141097 - 07 apr 11 4 / 8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 powe r added efficiency@1db gain compression versus frequency collector current @1db gain c ompression versus frequency
x band driver amplifier cha5 014 - 99f ref. : dscha50141097 - 07 apr 11 5 / 8 specifications subject to change without notice route dpartem entale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 output power versus input power output power versus gain compression
cha5014 - 99f x band driver amplifier ref. : dscha50141097 - 07 apr 11 6 / 8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 collector current versus input power
x band driver amplifier cha5 014 - 99f ref. : dscha50141097 - 07 apr 11 7 / 8 specifications subject to change without notice route dpartem entale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 chip mechanical da ta and pin references chip thickness = 100 +/ - 10 m rf pads (1, 12) = 118 x 68 m2 dc pads (2, 3, 4, 5, 9, 6, 7, 8, 9, 10, 11) = 96 x 96 m2 pin number pin name description 1 in input rf port 7, 9 nc 5, 8 vctrl collector current control voltage 2 t i ttl input 4 to ttl output 10 gnd ground (nc) 3, 6, 11 vc power supply voltage 12 out output rf port recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products.
cha5014 - 99f x band driver amplifier ref. : dscha50141097 - 07 apr 11 8 / 8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 assembly recommendations in test fixture (ttl interface) note: when the ttl interface is used for biasing, the pin to (pin number 4) must be connected to the pins vctrl (pins number 5 and 8). assembly recommendations in test fixture (using biasing circuits) ordering information chip form : cha5014 - 99f/00 information furnished is believed to be accurate and reliable. however united monolithic semicond uctors s.a.s. assumes no respons i bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent o r patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s. a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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