1998. 6. 15 1/1 semiconductor technical data KTB1260 epitaxial planar pnp transistor revision no : 0 general purpose application. features 1w (mounted on ceramic substrate). small flat package. complementary to ktd1898. maximum rating (ta=25 1 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:70 140, y:120 240, gr:200 400 * : KTB1260 mounted on ceramic substrate(250mm 2 ' 8t) x type name h rank fe lot no. marking characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 a collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -80 - - v dc current gain h fe (note) v ce =-3v, i c =-100ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.4 v transition frequency f t v ce =-5v, i c =-50ma, f=30mhz - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 25 - pf characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -1 a emitter current i e 1 a collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
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