transistors 1 publication date: june 2007 sjc00409aed this product complies with the rohs directive (eu 2002/95/ec). 2SD2620G silicon npn epitaxial planar type for low-frequency driver amplification features ? high forward current transfer ratio h fe ? low collector-emitter saturation voltage v ce(sat) ? high emitter-base voltage (collector open) v ebo absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 100 v collector-emitter voltage (base open) v ceo 100 v emitter-base voltage (collector open) v ebo 15 v collector current i c 20 ma peak collector current i cp 50 ma collector power dissipation p c 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 0 100 v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 0 100 v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 015v collector-base cutoff current (emitter open) i cbo v cb = 60 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 60 v, i b = 0 1.0 a forward current transfer ratio h fe v ce = 10 v, i c = 2 ma 400 1 200 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.05 0.20 v transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 200 mhz noise voltage nv v ce = 10 v, i c = 1 ma, g v = 80 db 80 mv r g = 100 k ? , function = flat electrical characteristics t a = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. package ? code ssmini3-f3 ? marking symbol: 3b ? pin name 1: base 2: emitter 3: collector maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
2SD2620G 2 sjc00409aed this product complies with the rohs directive (eu 2002/95/ec). i c ? v be h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c 0 80 120 40 0 120 80 40 ambient temperature t a ( c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 5 10 15 20 25 30 35 40 45 t a = 25 c i b = 100 a 90 a 80 a 70 a 60 a 50 a 40 a 30 a 20 a 10 a collector-emitter voltage v ce ( v ) collector current i c (m a ) 0.1 1 10 100 1 000 0.01 1 0.1 i c / i b = 10 t a = 85 c 25 c ? 25 c collector current i c ( ma ) collector-emitter saturation voltage v ce(sat) ( v ) 0 0.2 0.6 0.8 1.0 1.2 0.4 1.4 0 120 100 80 60 40 20 v ce = 10 v t a = 85 c 25 c ? 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 1 10 100 0 1 000 800 600 400 200 v ce = 10 v t a = 85 c 25 c ? 25 c collector current i c ( ma ) forward current transfer ratio h fe 040 10 30 20 1 10 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/
ssmini3-f3 unit: mm 1.00 0.05 (0.50) (0.50) 1.60 +0.05 ? 0.03 0.26 +0.05 ? 0.02 12 3 0.85 +0.05 ? 0.03 1.60 0.05 0.70 +0.05 ? 0.03 0 to 0.10 (5 ) (0.45) 0.13 +0.05 ? 0.02 0.375 0.05 (5 ) maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://www.semicon.panasonic.co.jp/en/ t h i s p r o d u c t c o m p l i e s w i t h t h e r o h s d i r e c t i v e ( e u 2 0 0 2 / 9 5 / e c ) .
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