c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 www. ruichips .com ru 7 580 r n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 75 v v gss gate - source voltage 2 5 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 80 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 3 2 0 a i d continuous drain current ( v gs =10v) t c =25 c 80 a t c =100 c 58 p d maximum power dissipation t c =25 c 125 w t c = 100 c 62.5 w r q jc thermal resistance - junction to case 1.2 c /w drain - source avalanche ratin gs e as avalanche energy, single pulsed 169 m j ? 7 5 v/ 80 a, r ds ( on ) = 8 m ( t y p .)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? motor control absolute maximum ratings n - channel mosfe t to - 220
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 2 www. ruichips .com ru 7 580 r electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 7 5 80 r unit min. typ. max. static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 7 5 v i dss zero gate voltage drain current v ds = 7 5 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 5 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 40 a 8 10 m w notes : pulse width limited by safe operating area. limited by t jmax , i as = 26 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 20 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 40 a, dl sd /dt=100a/ m s 4 3 ns q rr reverse recovery charge 9 0 nc dynamic character istics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 6 w c iss input capacitance v gs =0v, v ds = 35 v, frequency=1.0mhz 3 65 0 pf c oss output capacitance 9 80 c rss reverse transfer capacitance 2 6 5 t d ( on ) turn - on delay time v dd = 35 v, r l = 0.8 w , i ds = 40 a, v gen =10v, r g = 4.7 w 4 1 ns t r turn - on rise time 1 3 5 t d ( off ) turn - off delay time 1 8 0 t f turn - off fall time 9 2 gate charge characteristics q g total gate charge v ds = 60 v, v gs =10v, i ds = 40 a 6 7 nc q gs gate - source charge 15 q gd gate - drain c harge 2 5
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 3 www. ruichips .com ru 7 580 r t ypical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transien t impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 4 www. ruichips .com ru 7 580 r typical characteristics output characteristics drain - source on resi stance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 5 www. ruichips .com ru 7 580 r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - d rain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 6 www. ruichips .com ru 7 580 r avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 7 www. ruichips .com ru 7 580 r ordering and marking information device marking package pack aging quantity reel size tape width ru 7580 r ru 7 5 80 r to - 220 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 8 www. ruichips .com ru 7 580 r package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or pr otrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.00 8 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 9 www. ruichips .com ru 7 580 r customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5fl oor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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