kst-4009-000 1 DN030E npn silicon transistor features extremely low collector-to-emitter saturation voltage ( v ce (sat) = 0.1v typ. @i c /i b =100ma/10ma) suitable for low voltage large current drivers complementary pair with dp030e switching application ordering information type no. marking package code DN030E n01 sot-523f outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. emitter 3. collector 0.68 1 2 3 0~0.1 1.11 0.05 1.60 0.1 0.88 0.1 1.60 0.1 1.00 0.1 0.25~0.30 +0.1 -0.05
kst-4009-000 2 DN030E absolute m aximum r atings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo 15 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5 v collector current i c 300 ma collector dissipation p c 150 mw junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =50 m a, i e =0 15 - - v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 12 - - v emitter-base breakdown voltage bv ebo i e =50 m a, i c =0 5 - - v collector cut-off current i cbo v cb =12v, i e =0 - - 0.1 m a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 m a h fe1 v ce =1v, i c =100ma 200 - 450 - dc current gain h fe2 v ce =1v, i c =300ma 70 - - - v ce(sat1) i c =100ma, i b =10ma - - 0.2 v collector-emitter saturation voltage v ce(sat2) i c =300ma, i b =30ma - - 0.5 v v be(sat 1) i c =100ma, i b =10ma - - 1.2 v base-emitter saturation voltage v be(sat2) i c =300ma, i b =30ma - - 1.7 v transition frequency f t v ce =5v, i c =10ma - 300 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3 - pf
kst-4009-000 3 DN030E fig. 3 h fe - i c ` fig. 1 p c - t a fig. 5 v ce( sat) - i c electrical characteristic curves fig. 4 i c - v ce fig. 2 i c -v be
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