--- = --- =- i = an amp comdanv rf mosfet power transistor, 2ow, 28v 2 - 175 mhz DU2820S features n-channel enhancement mode device dmos structure lower capacitances for broadband operation high saturated output power lower noise figure than bipolar devices absolute maximum ratings at 25c parameter symbol rating units drain-source voltage v 0s 65 v gate-source voltage v gs 20 v drain-source current 1 4,s 1 24 t a 1 power dissipation junctiontemperature storage temperature p rj 62.5 w tj 200 ?c t stg -55 to +150 ?c thermal resistance 6 jc 2.8 ?cl-w j 1 4.04 1 4.55 [ x59 1 .l79 1 k 1 6.58 1 7.39 i .259 i 291 i l 1 .i0 1 x5 1 404 1 jo6 electrical characteristics at 25c i parameter symbol min max units test conditions drain-source breakdown voltaae bv..,, 65 - v v,.=o.o v, i,,=50 ma drain-source leakage current gate-source leakage current ?ass ?gss 1.0 ma v,,=28.0 v, v,,=o.o v 1.0 fl vgs=20.0 v. v,,=o.o v gate threshold voltage forwardtransconductance v 0sr-v gm 2.0 6.0 v vds=l 0.0 v, ids=1 00.0 ma 500 - ms v&o.0 v, 1,,=100.0 ma, av,,=l .o v, 80 ps pulse input capacitance c 15s 45 pf v,,=28.0 v, f=l .o mhz output capacitance c os5 40 pf v,,=28.0 v, f=l .o mhz reverse capacitance c rss a pf v,,=28.0 v, f=l .o mhz power gain gp 13 - db vd,=2a.o v, i,,=100 ma, p,,f20 w, f=175 mhz drain efficiency ?70 60 - % v,,=28.0 v, i,,=100 ma, po,=20 w, f=l75 mhz load mismatchtolerance vswr-t - 3o:l - v,,=28.0 v. i,,=1 00 ma, p,,1=;20 w, f=l75 mhz specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. t81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 2ow, 28v DU2820S v2.00 typical broadband performance curves 20 25 s z. t20 . s 15 - gain vs frequency v,,=28 v i,,=1 00 ma poe20 w 10 efficiency vs frequency v,,=28 v i,,=1 00 ma po,,,.=20 w 0 25 50 1w 150 2cq 0 25 50 100 150 230 frequency (mhz) frequency (mhz) power output vs power input 3or i?,,=28 v ido= 00 ma 1 200 mhz 0 0.2 0.4 0.6 0.6 1 1.2 1.4 1.6 1.7 power input(w) specifications subject to change without notice. mia-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 h europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 2ow, 28v DU2820S v2.00 typical device impedance frequency (mhz) z, (ohms) &,, (ohms) 30 17.5 -j 13.0 16.o+i2.5 i 50 1 15.0 -j 15.5 ( 15.q+j4.0 7 100 200 8.0 - j 14.0 12.0 + j 6.0 5.5 - j 8.0 9.25 + j 6.0 i?,,=28 v, i,,=100 ma, p,,,=20 watts z,, is the series equivalent input impedance of the device. z load is the series equivalent load impedance as measured from drain to ground. rf test fixture vgs vds j3 j4 wua-com, inc. north america: vds = 28 volts idci = looma rf in jl cl p ii--- c61 c71 - - l2 t rf out in c3 j2 - parts list cl ,c3 c2,c4 c5c6 c7 c8 c9 ll.l3 l2 rl ql board trimmer capacitor 5-8opf trimmer capacitor 3-3opf capacitor 0.01 ijf capacitor 0.001 uf capacitor 5.6pf capacitor 1opf 2 turns of no. 20 enamel wire on ?0.25? close wound 7 turns of no. 20 enamel wire on ?025? close wound resistor 1 ook ohms dlj2820s fr4 0.062 specifications subject to change without notice. tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 l europe: tel. +44 (1344)869 595 fax (800) 618-8883 fax +81 (03)3226-1451 fax +44(1344)300 020
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