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cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 1 / 14 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 10 - 16 ghz medium power amplifier gaas monolithic microwave ic in smd leadless package description the cha5266 - qdg is a three stage monolithic gaas medium power amplifier. it is designed for a wide range of applications, from professional to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in rohs compliant smd package. main features main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 10 16 ghz gain linear gain 23 db oip3 output toi 35 dbm pout output power @1db comp. 25.5 dbm ums a5266 yyww ? ? - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 gain & return losses (db) freq (ghz) s21 s11 s22 ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 2 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = +5.0v symbol parameter min typ max unit freq frequency range 10 16 ghz gain linear gain 23 db rl_in input return loss 9 db rl_out output return loss 20 db p1db output power @ 1db compression 25.5 dbm psat saturated output power 27 dbm oip3 output ip3 35 dbm nf noise figure 6 db idq quiescent drain current 320 ma vg gate voltage - 0.35 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 6.5v v idq drain bias current 0.45 a vg gate bias voltage - 2 to 0 v pin input continuous power 20 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vd1 23 dc drain voltage 1 st stage 5 v vd2 21 dc drain voltage 2nd stage 5 v vd3 19 dc drain voltage 3rd stage 5 v vg1 8 dc gate voltage 1 st stage - 0.35 v vg2 10 dc gate voltage 2nd stage - 0.35 v vg3 12 dc gate voltage 3rd stage - 0.35 v
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 3 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interfac e (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below the maximum value specified in the next table. so, the pcb system must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature cannot be maintained below the maximum specified temperature (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf).
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 4 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters tamb.= +25c, vd = +5.0v, id = 280ma freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.0 - 1.0 89.8 - 70.1 - 0.2 - 47.8 - 95.8 - 1.2 101.2 3.0 - 1.0 51.5 - 74.3 - 57.4 - 53.4 - 76.1 - 1.3 61.5 4.0 - 1.1 17.5 - 87.0 158.2 - 48.7 - 2.8 - 1.4 19.4 5.0 - 1.3 - 14.5 - 71.8 59.1 - 26.8 36.5 - 1.5 - 26.0 6.0 - 1.7 - 47.2 - 70.0 34.9 - 7.0 - 17.1 - 2.0 - 76.0 7.0 - 2.9 - 84.8 - 88.0 29.0 8.2 - 104.4 - 3.2 - 130.4 8.0 - 7.1 - 127.2 - 67.4 119.0 19.0 143.9 - 5.6 170.8 9.0 - 13.7 - 137.8 - 67.0 58.7 23.8 29.5 - 10.5 111.2 10.0 - 15.9 179.3 - 59.0 64.1 26.3 - 73.9 - 20.2 63.1 11.0 - 13.1 62.9 - 54.7 15.1 25.8 - 173.6 - 31.0 83.3 12.0 - 9.9 6.0 - 53.8 - 46.7 24.1 105.1 - 22.0 45.2 13.0 - 8.2 - 29.4 - 55.2 - 95.7 22.8 33.9 - 19.8 7.8 14.0 - 8.2 - 54.8 - 54.7 - 123.1 22.5 - 33.8 - 19.9 - 8.1 15.0 - 8.8 - 61.5 - 49.9 - 172.8 22.5 - 104.8 - 18.6 - 24.1 16.0 - 7.8 - 60.0 - 49.2 142.0 22.7 175.7 - 20.2 - 58.8 17.0 - 4.8 - 62.1 - 51.2 83.2 22.2 86.9 - 22.0 - 99.5 18.0 - 2.0 - 80.8 - 57.9 90.2 18.7 - 14.1 - 12.7 164.0 19.0 - 1.2 - 100.0 - 53.3 104.5 11.5 - 101.4 - 5.9 94.3 20.0 - 0.8 - 117.9 - 51.5 84.6 3.7 - 170.3 - 3.1 48.4 21.0 - 0.9 - 135.5 - 51.5 52.5 - 3.4 132.3 - 1.7 15.2 22.0 - 1.3 - 155.6 - 50.0 62.1 - 9.7 80.7 - 0.9 - 11.8 23.0 - 2.3 177.2 - 51.0 91.9 - 15.2 30.8 - 0.6 - 35.1 24.0 - 4.8 128.3 - 47.4 77.0 - 20.4 - 24.8 - 0.4 - 55.0 25.0 - 7.5 25.1 - 49.4 32.8 - 26.5 - 90.3 - 0.3 - 73.3 26.0 - 3.8 - 60.1 - 42.6 55.5 - 38.3 - 174.0 - 0.4 - 89.9 27.0 - 1.7 - 101.1 - 41.9 43.2 - 40.6 89.3 - 0.3 - 104.8 28.0 - 0.9 - 128.0 - 41.8 23.3 - 41.2 45.3 - 0.2 - 119.4 29.0 - 0.4 - 150.1 - 38.7 5.8 - 38.0 11.0 - 0.2 - 132.0 30.0 - 0.2 - 168.4 - 39.4 - 25.9 - 38.8 - 24.6 0.0 - 143.3
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 5 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5.0v, id = 320ma measurement in the qfn planes as defined in paragraph definition of the sij reference planes linear gain & return loss versus frequency - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 gain and retun losses (db) frequency (ghz) s21 s11 s22
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 6 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd = +5.0v, id = 320ma measurement in the plan of the connectors, using the proposed land pattern & board, as defined in paragraph evaluation mother board linear gain versus frequency & temperature output power at 1db compression versus frequency 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 8 9 10 11 12 13 14 15 16 17 18 gain (db) frequency (ghz) - 40 c +25 c +85 c 18 19 20 21 22 23 24 25 26 27 28 29 30 9 10 11 12 13 14 15 16 17 output p1db (dbm) frequency (ghz)
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 7 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5.0v, id = 320ma noise figure versus frequency output ip3 versus output power & frequency 2 3 4 5 6 7 8 9 10 11 12 9 10 11 12 13 14 15 16 17 nf (db) frequency (ghz) 20 22 24 26 28 30 32 34 36 38 40 - 2 0 2 4 6 8 10 12 14 16 18 20 22 oip3 (dbm) pout dcl (dbm) 10 ghz 11 ghz 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 8 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c, vd = +5.0v, id = 320ma c/i3 versus pout dcl & frequency output ip3 versus frequency & temperature @ pout dcl = 9 dbm 30 35 40 45 50 55 60 65 70 75 80 - 2 0 2 4 6 8 10 12 14 16 18 20 22 c/i3 (dbc) pout dcl (dbm) 10 ghz 11 ghz 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 9 10 11 12 13 14 15 16 17 oip3 (dbm) frequency (ghz) - 40 c +25 c +85 c
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 9 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd = +5.0v, id = 320ma output ip3 versus output power & temperature @ 13 ghz 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 - 2 0 2 4 6 8 10 12 14 16 18 oip3 (dbm) pout dcl (dbm) - 40 c +25 c +85 c
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 10 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - nc 9 - vg1 17 - gnd (2) units : mm 2 - gnd (2) 10 - vg2 18 - gnd (2) from the standard : jedec mo - 220 3 - gnd (2) 11 - vg3 19 - nc (vggd) 4 - rf in 12 - nc 20 - vd3 25 - gnd 5 - gnd (2) 13 - gnd (2) 21 - vd2 6 - gnd (2) 14 - gnd (2) 22 - vd1 7 - gnd (2) 15 - rf out 23 - nc 8 - nc 16 - gnd (2) 24 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 11 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 definition of the si j reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. then, the given sij parame ters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". package information parameter value package body material rohs - compliant low stress injection moulded plastic lead finish 100% matte sn msl rating msl1 3.18 3.18
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 12 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
10 - 16 ghz medium power amplifier cha5266 - qdg ref. : dscha5266 - qdg3233 - 21 aug 13 13 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes due to esd protection circuits on rf input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the rf accesses. esd protections are also implemented on gate and control acc esses. the dc connections do not include any decoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling (100pf + 10nf) on the pc board, as close as possible to the package. dc schematic 5v, 320ma 45ma 90ma vd= 5v stage 2 stage 1 540 ? 500 ? vg# - 0.35v stage 3 stage 3 520 ? 185 ma
cha5266 - qdg 10 - 16 ghz medium power amplifier ref. : dscha5266 - qdg3233 - 21 aug 13 14 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 4x4 package: cha5266 - qdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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