1 power transistors 2sb935, 2sb935a silicon pnp epitaxial planar type for low-voltage switching n features l low collector to emitter saturation voltage v ce(sat) l high-speed switching l n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C40 C50 C20 C40 C5 C15 C10 35 1.3 150 C55 to +150 unit v v v a a w ?c ?c 2sb935 2sb935a 2sb935 2sb935a t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t c ob t on t stg t f conditions v cb = C40v, i e = 0 v cb = C50v, i e = 0 v eb = C5v, i c = 0 i c = C10ma, i b = 0 v ce = C2v, i c = C 0.1a v ce = C2v, i c = C2a i c = C7a, i b = C 0.23a i c = C7a, i b = C 0.23a v ce = C10v, i c = C 0.5a, f = 10mhz v cb = C10v, i e = 0, f = 1mhz i c = C2a, i b1 = C66ma, i b2 = 66ma min C20 C40 45 90 typ 150 200 0.1 0.5 0.1 max C50 C50 C50 260 C 0.6 C1.5 unit m a m a v v v mhz pf m s m s m s 2sb935 2sb935a 2sb935 2sb935a * h fe2 rank classification rank q p h fe2 90 to 180 130 to 260 unit: mm 1:base 2:collector 3:emitter n type package 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 unit: mm 8.5 0.2 4.4 0.5 2.0 10.0 0.3 14.7 0.5 4.4 0.5 6.0 0.3 3.4 0.3 2.54 0.3 5.08 0.5 1.0 0.1 0.8 0.1 1.5 +0 ?.4 3.0 +0.4 ?.2 0 to 0.4 1.1 max. r0.5 r0.5 123 1:base 2:collector 3:emitter n type package (ds)
2 power transistors 2sb935, 2sb935a p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 50 50 2mm al heat sink (3) without heat sink (p c =1.3w) (1) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ?2 ?0 ? ? ? ? t c =25?c ?00ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma i b =?60ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0 ?0.3 3 ?0.01 ?0 ? ?0.1 ?0.03 ?0.3 ? i c /i b =30 t c =100?c ?5?c 25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?0.3 3 ?0.01 ?0 ? ?0.1 ?0.03 ?0.3 ? i c /i b =30 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.1 ? ?0 ?00 ?0.3 ? ?0 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?0v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 1 3 10 30 100 300 1000 3000 10000 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 8 ? ? ? ? ? ? ? 0.01 10 1 0.1 0.03 0.3 3 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =30 (? b1 =i b2 ) v cc =?0v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 non repetitive pulse t c =25?c 10ms t=1ms i cp i c 300ms 2sb935a 2sb935 collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sb935, 2sb935a r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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