DMN4025LSD document number: ds35268 rev: 1-2 1 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information 40v dual n-channel en hancement mode mosfet product summary v (br)dss r ds(on) max i d max (a) t a = 25 c (notes 3 & 5) 40v 25m @ v gs = 10v 7.4 40m @ v gs = 4.5v 6.2 description and applications this mosfet has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor control ? backlighting ? dc-dc converters ? printer equipment features and benefits ? low r ds(on) ? minimizes conduction losses ? fast switching speed ? minimizes switching losses ? "green" component and rohs compliant (note 1) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over copper lead frame. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 1) product marking reel size (inches) tape width (mm) quantity per reel DMN4025LSD-13 n4025ld 13 12 2,500 note: 1. diodes, inc. defines ?green? products as those which are rohs compliant and contain no halogens or antimony compounds; further information about diodes inc.?s ?green? policy can be found on our website. for packaging details, go to our website. marking information = manufacturer?s marking n4025ld = product type marking code yyww = date code marking yy = year (ex: 10 = 2010) ww = week (01 - 53) top view so-8 pin-out top view device symbol d 2 s2 g2 d 1 s1 g 1 d1 s1 g1 s2 g2 d1 d2 d2 n4025ld yy ww
DMN4025LSD document number: ds35268 rev: 1-2 2 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 40 v gate-source voltage v gss 20 continuous drain current v gs = 10v (notes 3 & 5) i d 7.4 a t a = 70c (notes 3 & 5) 5.8 (notes 2 & 5) 5.6 (notes 2 & 6) 6.7 pulsed drain current v gs = 10v (notes 4 & 5) i dm 29.0 continuous source current (body diode) (notes 3 & 5) i s 3.0 pulsed source current (body diode) (notes 4 & 5) i sm 29.0 thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (notes 2 & 5) p d 1.25 10 w mw/ c (notes 2 & 6) 1.8 14.3 (notes 3 & 5) 2.14 17.2 thermal resistance, junction to ambient (notes 2 & 5) r ja 100 c/w (notes 2 & 6) 70 (notes 3 & 5) 58 thermal resistance, junction to lead (notes 5 & 7) r jl 51 operating and storage temperature range t j, t stg -55 to +150 c notes: 2. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. same as note (2), except the device is measured at t 10 sec. 4. same as note (2), except the device is pulsed with d = 0.02 and pulse width 300s. 5. for a dual device with one active die. 6. for a device with two active die running at equal power. 7. thermal resistance from junction to so lder-point (at the end of the drain lead).
DMN4025LSD document number: ds35268 rev: 1-2 3 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information thermal characteristics
DMN4025LSD document number: ds35268 rev: 1-2 4 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information electrical characteristics t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 40 ? ? v i d = 250 a, v gs = 0v zero gate voltage drain current i dss ? ? 1.0 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 0.8 1.3 1.8 v i d = 250 a, v ds = v gs static drain-source on-resistance (note 8) r ds (on) ? 0.013 0.025 ? v gs = 10v, i d = 3a 0.028 0.040 v gs = 4.5v, i d = 3a forward transconductance (notes 8 & 9) g fs ? 12.6 ? s v ds = 5v, i d = 3a diode forward voltage (note 8) v sd ? 0.7 1.0 v i s = 1a, v gs = 0v dynamic characteristics (note 9) input capacitance c iss ? 1790 ? pf v ds = 20v, v gs = 0v f = 1mhz output capacitance c oss ? 160 ? reverse transfer capacitance c rss ? 120 ? gate resistance r g ? 1.03 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (note 10) q g ? 16.0 ? nc v gs = 4.5v v ds = 20v i d = 3a total gate charge (note 10) q g ? 37.6 ? v gs = 10v gate-source charge (note 10) q g s ? 7.8 ? gate-drain charge (note 10) q g d ? 6.6 ? turn-on delay time (note 10) t d ( on ) ? 8.1 ? ns v dd = 20v, v gs = 10v i d = 3a turn-on rise time (note 10) t r ? 15.1 ? turn-off delay time (note 10) t d ( off ) ? 24.3 ? turn-off fall time (note 10) t f ? 5.3 ? notes: 8. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 9. for design aid only, not subject to production testing. 10. switching characteristics are independent of operating junction temperatures. typical characteristics 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 3.5v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs 0 5 10 15 20 25 30 01 2345 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds
DMN4025LSD document number: ds35268 rev: 1-2 5 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 10v gs 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a
DMN4025LSD document number: ds35268 rev: 1-2 6 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 35 40 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 10,000 i , leaka g e c u r r en t (na) dss 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v, g a t e-s o u r c e v o l t a g e (v) gs v = 20v i = 12a ds d
DMN4025LSD document number: ds35268 rev: 1-2 7 of 8 www.diodes.com march 2011 ? diodes incorporated a product line o f diodes incorporated DMN4025LSD advance information package outline dimensions suggested pad layout so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
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