2N6544 2n6545 npn silicon power transistor description: the central semiconductor 2N6544, 2n6545 types are silicon npn triple diffused mesa transistors designed for high voltage, high current, high speed switching applications. marking: full part number maximum ratings: (t c =25c) symbol 2N6544 2n6545 units collector-emitter voltage v cev 650 850 v collector-emitter voltage v cex 350 450 v collector-emitter voltage v ceo 300 400 v emitter-base voltage v ebo 9.0 v continuous collector current i c 8.0 a peak collector current i cm 16 a continuous emitter current i e 16 a peak emitter current i em 32 a continuous base current i b 8.0 a peak base current i bm 16 a power dissipation p d 125 w power dissipation, t c =100c p d 71.5 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.4 c/w electrical characteristics: (t c =25c unless otherwise noted) 2N6544 2n6545 symbol test conditions min max min max units i cev v ce =rated v cev , v be =1.5v - 0.5 - 0.5 ma i cev v ce =rated v cev , v be =1.5v, t c =100c - 2.5 - 2.5 ma i cer v ce =rated v cev , r be =50, t c =100c - 3.0 - 3.0 ma i ebo v eb =9.0v - 1.0 - 1.0 ma bv cex v cl =rated v cex , i c =4.5a, t c =100c 350 - 450 - v bv cex v cl =rated v ceo -100v, i c =8.0a, t c =100c 200 - 300 - v bv ceo i c =100ma 300 - 400 - v v ce(sat) i c =5.0a, i b =1.0a - 1.5 - 1.5 v v ce(sat) i c =8.0a, i b =2.0a - 5.0 - 5.0 v v ce(sat) i c =5.0a, i b =1.0a, t c =100c - 2.5 - 2.5 v v be(sat) i c =5.0a, i b =1.0a - 1.6 - 1.6 v v be(sat) i c =5.0a, i b =1.0a, t c =100c - 1.6 - 1.6 v h fe v ce =3.0v, i c =2.5a 12 60 12 60 h fe v ce =3.0v, i c =5.0a 7.0 35 7.0 35 to-3 case r1 (7-february 2011) www.centralsemi.com
electrical characteristics - continued: (t c =25c unless otherwise noted) symbol test conditions min typ max units f t v ce =10v, i c =300ma, f=1.0mhz 6.0 28 mhz c ob v cb =10v, i e =0, f=1.0mhz 75 300 pf i s/b v ce =100v, t=1.0s 0.2 a resistive load t d 0.05 s t r 1.0 s t s 4.0 s t f 1.0 s inductive load (clamped) t s 4.0 s t f 0.9 s t s 1.2 s t f 0.18 s 2N6544 2n6545 npn silicon power transistor to-3 case - mechanical outline lead code: 1) base 2) emitter case) collector marking: full part number v cc =250v, i c =5.0a, i b1 =i b2 =1.0a, t p =100s, duty cycle2.0% v cl =rated v cex , i c =5.0a, i b1 =1.0a, v be =5.0v, t c =100c v cl =rated v cex , i c =5.0a, i b1 =1.0a, v be =5.0v, t c =25c www.centralsemi.com r1 (7-february 2011)
|
