SSM6E02TU 2009-10-07 1 toshiba multi-chip device silicon p-channel mos type + n-channel mos type SSM6E02TU power management switch applications ? 1.5 v drive ? p-channel mosfet and n-channel mosfet incorporated into one package. ? low power dissipation due to p-channel mosfet that features low r ds (on) and low-voltage operation q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?20 v gate-source voltage v gss 8 v dc i d -1.8 drain current pulse i dp (note 1) -3.6 a q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 0.1 drain current pulse i dp (note 1) 0.2 a absolute maximum ratings (q1, q2 common) (ta = 25c) characteristics symbol rating unit drain power dissipation p d (note 2) 0.5 w channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: pulse width limited by maximum channel temperature. note 2: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) unit: mm uf6 jedec D jeita D toshiba 2-2t1d weight: 7.0 mg (typ.) 1.nch source 2.pch drain 3.pch drain 4.pch source 5.nch gate 6.pch gate nch drain 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 0.16-0.05 5 4 0.70.05 +0.1 +0.06
SSM6E02TU 2009-10-07 2 q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = ?1 ma, v gs = 0 ?20 ? ? drain-source breakdown voltage v (br) dsx i d = ?1 ma, v gs = +8 v ?12 ? ? v drain cut-off current i dss v ds = ?20 v, v gs = 0 ? ? ?10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = ?3 v, i d = ?1 ma ?0.3 ? ?1.0 v forward transfer admittance |y fs | v ds = ?3 v, i d = ? 0.9 a (note 3) 2.7 5.4 ? s i d = ?1.0 a, v gs = ? 2.5 v (note 3) ? 95 136 i d = ?1.0 a, v gs = ? 1.8 v (note 3) ? 122 204 drain-source on-resistance r ds (on) i d = ?0.1 a, v gs = ? 1.5 v (note 3) ? 137 364 m input capacitance c iss ? 568 ? output capacitance c oss ? 75 ? reverse transfer capacitance c rss v ds = ?10 v, v gs = 0 f = 1 mhz ? 67 ? pf turn-on time t on ? 29 ? switching time turn-off time t off v dd = ?10 v, i d = ?0.9 a v gs = 0 to ? 2.5 v, r g = 4.7 ? 39 ? ns total gate charge q g ? 10.6 ? gate-source charge q gs ? 7.4 ? gate-drain charge q gd v ds = ?16 v, i ds = -1.8 a, v gs = ? 4 v ? 3.3 ? nc drain-source forward voltage v dsf i d = 1.8 a, v gs = 0 (note 3) ? 0.8 1.2 v note 3: pulse test q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 20 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance |y fs | v ds = 3 v, i d = 10 m a (note 3) 40 ? ? ms i d = 10 ma, v gs = 4 v (note 3) ? 1.5 3.0 i d = 10 ma, v gs = 2.5 v (note 3) ? 2.2 4.0 drain-source on-resistance r ds (on) i d = 1 ma, v gs = 1.5 v (note 3) ? 5.2 15 input capacitance c iss ? 9.3 ? output capacitance c oss ? 9.8 ? reverse transfer capacitance c rss v ds = 3 v, v gs = 0 f = 1 mhz ? 4.5 ? pf turn-on time t on ? 70 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma v gs = 0 to 2.5 v, r g = 50 ? 125 ? ns note 3: pulse test
SSM6E02TU 2009-10-07 3 marking equivalent circuit (top view) precaution v th can be expressed as the voltage between the gate and source when the low operating current value is i d = -1ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. handling precaution when handling individual devices (which are not yet mount ed on a circuit board), ensure that the environment is protected against static electricity. o perators should wear anti-static clothing, and containers and other objects that come into direct contact with devices s hould be made of anti-static materials. thermal resistance r th (j-a) and drain power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please take heat dissipation into consideration. 6 5 4 1 2 3 ktb 6 5 4 1 2 3 q2 q1
SSM6E02TU 2009-10-07 4 q1 (pch mosfet) drain - source voltage v ds (v) i d ? v ds drain current i d (a) 0 -4 -1.5 0 -0.5 -1 -1.5 -2 -0.5 -3 -3.5 gate - source voltage v gs (v) i d ? v gs drain current i d (ma) -10000 -0.01 0 -100 -1000 -1 -10 -0.1 -1.6 -0.2 -0.6 ? 25 c common source v ds = -3 v ta = 85 c 25 c -0.4 drain ? source on-resistance r ds (on) (m ) gate - source voltage v gs (v) r ds (on) ? v gs 0 0 -2 -4 -6 -8 100 200 300 400 i d = -0.1 a common source ambient temperature ta (c) r ds (on) ? ta drain ? source on-resistance r ds (on) (m ) common source 500 0 ? 50 i d = -0.1 a / v gs = -1.5 v 0 50 150 100 200 300 400 100 drain current i d (a) r ds (on) ? i d drain ? source on-resistance r ds (on) (m ) 400 0 0 100 -2 -2 -6 -8 150 250 350 common source ta = 25 c v gs = -1.5 v common source ta = 25c vgs = -1.2 v -1.5 v -1.8 v -4 v -1.4 -1.2 -1.0 -0.8 -2.5 v -1.8 v gate - source voltage v gs (v) drain ? source on-resistance r ds (on) (m ) 0 -1 -4 -3 -4 0 100 200 300 400 r ds (on) ? v gs 25 c ta = 85 c ? 25 c -1.0 a / -2.5 v -1.0 a / -1.8 v -1 -2 -2.5 -2.5 v i d = -1.0 a common source ta = 85 c 25 c ? 25 c 50 200 300 450
SSM6E02TU 2009-10-07 5 q1 (pch mosfet) switching time t (ns) drain current i d (a) t ? i d 1 -0.01 100 -0.1 1000 -1 -10 common source v dd = -10 v v gs = 0 to -2.5v ta = 25 c r g = 4.7 t off t f 10 t on t r drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 0 0.5 1 0 1.2 0.6 0.2 0.8 0.4 1 1.5 2 common source v gs = 0 v ta = 25 c g d s i dr ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -0.8 0 ? 25 0 25 150 -0.2 -0.4 -0.6 -0.7 50 75 100 125 common source v ds = -3 v i d = -1 ma drain current i d (ma) forward transfer admittance ? y fs ? (s) |y fs | ? i d common source v ds = -3 v ta = 25 c 0.01 -10000 -1 0.1 1 10 -10 -100 -1000 30 3 0.03 0.3 drain ? source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 100 1000 5000 3000 300 500 30 50 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss total gate charge q g (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 25 -3 -4 51015 -7 -10 -1 -5 -2 -8 -9 common source i d = -1.8 a ta = 25 c -6 v dd = -16 v -0.5 -0.1 -0.3 20
SSM6E02TU 2009-10-07 6 q2 (nch mosfet) i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta v th ? ta drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) gate-source voltage v gs (v) ambient temperature ta (c) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) gate threshold voltage v th (v) drain-source on resistance r ds (on) ( ) 2.5 v v gs = 1.5 v 0 1 4 12 1000 10 2 6 8 100 common source ta = 25 c 10 4 v 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 1.3 v 1.5 1.7 1.9 common source ta = 25 c 3 4 10 2.5 2.3 2.1 04 1 0 8 26 0 2 6 1 4 5 3 25c ta = 100c ? 25c common source i d = 10 ma 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c 0 2 8 6 4 2.5 v, 10 ma v gs = 1.5 v, i d = 1 ma common source ? 25 50 150 125 0 75 25 100 4 v, 10 ma common source i d = 0.1 ma v ds = 3 v ? 25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8
SSM6E02TU 2009-10-07 7 q2 (nch mosfet) ? y fs ? ? i d i dr ? v ds c ? v ds t ? i d drain current i d (ma) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (ma) drain reverse current i dr (ma) forward transfer admittance ? y fs ? (ms) switching time t (ns) capacitance c (pf) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds = 3 v ta = 25 c 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 common source v dd = 3 v v gs = 0 to 2.5 v ta = 25 c t r t on t f t off 0 100 250 50 150 200 0 ? 1.4 ? 0.4 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25 c g d s i dr c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25 c 0.3 10 100 1 5 50 0.1 1 10 100 5 50 0.5 30 3 0.5 3 30 0.3
SSM6E02TU 2009-10-07 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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