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this is information on a product in full production. may 2014 docid16558 rev 16 1/23 23 2n2222ahr hi-rel 40 v, 0.8 a npn transistor datasheet - production data figure 1. internal schematic diagrami features ? hermetic packages ? escc and jans qualified ? up to 100 krad(si) low dose ratee description the 2n2222ahr is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 ub 3 1 2 3 1 2 4 pin 4 in ub is connected to the metallic lid. parameter escc jans bv ceo min 40 v 50 v i c (max) 0.8 a h fe at 10 v - 150 ma 100 table 1. device summary device qualification system agency specification package radiation level eppl jansr2n2222aubx jansr mil-prf-19500/291 ub 100 krad high and low dose rate - jans2n2222aubx jans mil-prf-19500/291 ub - - 2n2222arubx escc flight 5201/002 ub 100 krad - low dose rate target 2n2222aubx escc flight 5201/002 ub - target soc2222arhrx escc flight 5201/002 lcc-3 100 krad - low dose rate yes soc2222ahrx escc flight 5201/002 lcc-3 - yes 2n2222arhrx escc flight 5201/002 to-18 100 krad - low dose rate target 2n2222ahrx escc flight 5201/002 to-18 - - www.st.com
contents 2n2222ahr 2/23 docid16558 rev 16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 jans electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 escc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 ub . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 lcc-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 to-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 docid16558 rev 16 3/23 2n2222ahr electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v ceo collector-emitter voltage (i b = 0) for jans devices 50 v collector-emitter voltage (i b = 0) for escc devices 40 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 0.8 a p tot total dissipation at t amb 25 c escc: to-18 lcc-3 and ub lcc-3 and ub (1) jans: lcc-3ub total dissipation at t case 25 c escc: to-18 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.5 0.5 0.73 0.5 1.8 w total dissipation at t sp(is) = 25 c jans: ub 1 w t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter lcc-3 and ub to-18 unit r thjc thermal resistance junction-case (max) for jans - - c/w thermal resistance junction-case (max) for escc - 97 rt hjsp(is) thermal resistance junction-solder pad (infinite sink) (max) for jans 90 - thermal resistance junction-solder pad (infinite sink) (max) for escc -- r thja thermal resistance junction-ambient (max) for jans 325 - thermal resistance junction-ambient (max) for escc 350 240 (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 350 electrical characteristics 2n2222ahr 4/23 docid16558 rev 16 2 electrical characteristics jans and escc version of the products are assembled and tested in compliance with the agency specification it is qualified in. the electrical characteristics of each version are provided in dedicated tables. t case = 25 c unless otherwise specified. 2.1 jans electrical characteristics table 4. jans electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 75 v v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 10 a na a i ces collector cut-off current (i e = 0) v ce = 50 v - 50 na i ebo emitter cut-off current (i c = 0) v eb = 6 v v eb = 4 v - 10 10 a na v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 50 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma - 0.3 1 v v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma 0.6 1.2 2 v v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 50 75 100 100 30 35 - 325 300 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz v ce = 10 v i c =1 ma f = 1 khz 2.5 50 - c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf c ibo output capacitance (i e = 0) v eb = 0.5 v 100 khz f 1 mhz -25pf docid16558 rev 16 5/23 2n2222ahr electrical characteristics 2.2 escc electrical characteristics t on turn-on time v cc = 30 v i c = 150 ma i b1 = 15 ma -35ns t off turn-off time v cc = 30 v i c = 150 ma i b1 = -i b2 = 15 ma - 300 ns 1. pulsed duration = 300 s, duty cycle 2 % table 4. jans electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit table 5. escc electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v t amb = 150 c - 10 10 na a i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 100 a 75 - v v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 30 ma 40 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 a 6 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma - 0.3 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 0.87 1.2 v h fe (1) dc current gain i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v i c = 10 ma v ce = 10 v t amb = -55 c 35 75 100 40 35 - 300 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz 3-10 c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf electrical characteristics 2n2222ahr 6/23 docid16558 rev 16 2.3 electrical characteristics (curves) t on turn-on time v cc = 30 v i c = 150 ma i b1 = 15 ma -35ns t off turn-off time v cc = 30 v i c = 150 ma i b1 = -i b2 = 15 ma - 285 ns 1. pulsed duration = 300 s, duty cycle 2 % table 5. escc electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit figure 2. safe operating area for lcc-3 and ub figure 3. safe operating area for to-18 figure 4. dc current gain figure 5. collector emitter saturation voltage , & 9 & |