TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 1/9 version: c14 ito - 220 to - 251 (ipak) key parameter performance parameter value unit v ds 700 v r ds(on) (max) 0.9 ? q g 9.7 nc to - 252 (dpak) features super-junction technology high performance due to small figure-of-merit high ruggedness performance high commutation performance block diagram n-channel mosfet application power supply. lighting ordering information part no. package packing TSM70N900ci c0g ito-220 50pcs / tube TSM70N900ch c5g to-251 75pcs / tube TSM70N900cp rog to-252 2.5kpcs / 13 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds absolute maximum ratings (t c = 25 o c unless otherwise noted) parameter symbol limit unit ito-220 ipak/dpak drain-source voltage v ds 700 v gate-source voltage v gs 30 v continuous drain current (note 1) t c = 25 o c i d 4.5 a pulsed drain current (note 2) i dm 13.5 a total power dissipation @ t c =25 o c p dtot 20 50 w single pulsed avalanche energy (note 3) e as 64 mj single pulsed avalanche current (note 3) i as 1.6 a operating junction and storage temperature range t j , t stg - 55 to +150 o c pin definition : 1. gate 2. drain 3. source
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 2/9 version: c14 thermal performance parameter symbol limit unit ito-220 ipak/dpak junction to case thermal resistance r ? jc 6.25 2.5 o c/w junction to ambient thermal resistance r ? ja 62 o c/w electrical specifications (t c = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static (note 4) drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 700 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 3.1 4 v gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 700v, v gs = 0v i dss -- -- 1 a drain-source on-state resistance v gs = 10v, i d = 1.5 a r ds(on) -- 0.83 0.9 ? dynamic (note 5) total gate charge v ds = 380v, i d = 2.3a, v gs = 10v q g -- 9.7 -- nc gate-source charge q gs -- 2.9 -- gate-drain charge q gd -- 3.5 -- input cavcitance v ds = 100v, v gs = 0v, f = 1.0mhz c iss -- 482 -- pf output capacitance c oss -- 34 -- gate resistance f = 1mhz, open drain r g -- 3.6 -- ? switching (note 6) turn-on delay time v dd = 380v, r gen = 40 ? , i d = 2.3a, v gs = 10v, t d(on) -- 20 -- ns turn-on rise time t r -- 54 -- turn-off delay time t d(off) -- 34 -- turn-off fall time t f -- 48 -- source-drain diode (note 4) forward on voltage i s = 4.5a, v gs = 0v v sd -- -- 1.4 v reverse recovery time v r = 200v, i s = 2.3a di f /dt = 100a/ s t rr -- 176 -- ns reverse recovery charge q rr -- 1.1 -- c notes: 1. current limited by package 2. pulse width limited by the maximum junction temp erature 3. l = 50mh, i as = 1.6a, v dd = 50v, r g = 25 ? , starting t j = 25 o c 4. pulse test: pw 300s, duty cycle 2% 5. for design aid only, not subject to production t esting. 6. switching time is essentially independent of ope rating temperature.
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 3/9 version: c14 electrical characteristics curves output characteristics transfer characteristics on-resistance vs. drain current gate-source voltage vs. gate charge on-resistance vs. junction temperature source-drain diode forward current vs. voltage
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 4/9 version: c14 electrical characteristics curves capacitance vs. drain-source voltage bv dss vs. junction temperature maximum safe operating area (dpak/ipak) maximum safe operating area (ito-220)
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 5/9 version: c14 electrical characteristics curves normalized thermal transient impedance , junction-to-case (dpak/ipak) normalized thermal transient impedance, junction-to-case (ito-220) 10 - 3 10 - 2 10 - 1 10 0 10 1 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 square wave pulse duration (s) 10 - 4 10 - 3 10 - 2 10 - 1 10 0 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 s quare wave pulse duratio n (s ) 10 1 duty = 0.5 duty = 0.2 duty = 0.1 duty = 0.05 duty = 0.02 duty = 0.01 single pulse duty = 0.5 duty = 0.2 duty = 0.1 duty = 0.05 duty = 0.02 duty = 0.01 single pulse 10 - 4
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 6/9 version: c14 ito-220 mechanical drawing unit: millimeters marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 7/9 version: c14 to-251 (ipak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 8/9 version: c14 to-252 (dpak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
TSM70N900 700v, 4.5a, 0.9 ? n-channel power mosfet 9/9 version: c14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide"> a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
|
