200806053-3 a d v a n ced p o w e r electr on i cs c o r p . 1/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i d c i dm d at t c =25c w / c t stg t j symbol value unit parameter rating gate-source voltage + continuous drain curren t 3 continuous drain curren t 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP75T10GS-3 is in the to-263 package, which is widely used g d s bv 10 0v fast switching performance r 15m w simple drive requirement low on-resistance rohs-compliant i 65a drain-source voltage 100 v 20 v at t =2 5 c 65 a at t = 10 0 c 41 a 260 a p total power dissipation 138 w linear derating factor 1.11 rthj-c maximum thermal resistance, junction-case rthj-a maximum thermal resistance, junction-ambient 62 c/w 0.9 c/w for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. the ap75t10gp-3 is in the to-220 through-hole package which is used where a low pcb footprint or an attached heatsink is required. g d s to-263 (s) g d s to-220 (p) ordering information AP75T10GS-3tr rohs-compliant to-263, shipped on tape and reel (800 pcs/reel) ap75t10gp-3tb rohs-compliant to-220, shipped in tubes
a d v a n ced p o w e r electr on i cs c o r p . 2/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d = 1ma 100 - - v d b v dss / d t j breakdown voltage temperature coefficient reference to 2 5c, i d =1ma - 0.09 - v/c r ds(on) static drain-source on-resistanc e 2 v g s =10v, i d =30a - - 15 mw v g s = 4.5v, i d = 16a - - 21 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 52 - s i dss drain-source leakage current v ds =100v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =80v ,v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 20v - - + 100 na q g total gate charge 2 i d =30a - 69 110.4 nc q gs gate-source charge v ds =80v - 12 - nc q gd gate-drain ("miller") charge v gs =4.5v - 39 - nc t d(on) turn-on delay time 2 v ds =50v - 12 - ns t r rise time i d =30a - 75 - ns t d(off) turn-off delay time r g =10w , v gs = 10v - 220 - ns t f fall time r d = 1.6w - 250 - ns c iss input capacitance v gs =0v - 5690 9100 pf c oss output capacitance v ds =25v - 540 - pf c rss reverse transfer capacitance f=1.0mhz - 310 - pf r g gate resistance f=1.0mhz - 1.1 w source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s = 30a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =30a, v gs =0 v - 51 - ns q rr reverse recovery charge di/dt=100a/s - 74 - nc notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
a d v a n ced p o w e r electr on i cs c o r p . 3/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 50 100 150 200 250 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 6.0 v 5.0v 4.5v v g =3.0v 0 20 40 60 80 100 120 0123456789 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 6.0v 5.0v 4.5v v g =3.0v t c = 150 o c 11 12 13 14 15 16 17 24681 0 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 15 30 45 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
a d v a n ced p o w e r electr on i cs c o r p . 4/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =64v v ds =80v i d =30a 100 1000 10000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
a d v a n ced p o w e r electr on i cs c o r p . 5/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap75t10 gp = rohs-compliant to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 75t10gp ywwsss l5 e d1
a d v a n ced p o w e r electr on i cs c o r p . 6/6 ap75t10gp/s-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-263 marking information: to-263 product: ap75t10 package code: date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence gs = rohs-compliant to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. symbols e b b1 e d l2 l3 c1 a a1 l4 c ywwsss 75t10 gs ywwsss e b b1 e d l2 l3 c1 a a1 l4 c
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