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  20 stern ave. springfield. new jersey 07081 u.sa telephone (973) 376-2922 (212)227-6006 fax: (973) 376-8960 npn high power silicon transistor devices 2N3902 2n5157 maximum ratings ratings collector-emitter voltage emitter-base voltage collector-base voltage base current collector current total power dissipation (2> ta = +25c (1) @ tc = +75c (2) operating & storage temperature range symbol vceo vebo vcbo ib ic pt tj, tstg 2N3902 400 5.0 2n5157 500 6.0 700 2.0 3.5 5.0 100 -65 to +200 unit vdc vdc vdc adc adc w w c thermal characteristics characteristics thermal resistance, junction-to-case symbol rejc max. 1.25 unit c/w 1) derate linearly 29 mw/c for ta > +25c 2) derate linearly 0.8 w/c for tc > +75c electrical characteristics to-3 (to-204aa)* *see appendix a for package outline characteristics symbol miii. max. unit off characteristics collector-emitter cutoff current vce = 325 vdc 2N3902 vce = 400vdc 2n5157 collector-emitter cutoff current vbe = 1.5 vdc; vce = 700 vdc emitter-base cutoff current veb = 5.0 vdc 2N3902 veb = 6.0vdc 2n5157 iceo icex iebo 250 250 500 200 200 (jadc (jadc joadc on characteristics^ base-emitter saturation voltage ic= 1.0 adc; ib = 0.1 adc ic = 3.5 adc; ib = 0.7 adc collector-emitter saturation voltage ic= 1.0 adc; ib = 0.1 adc ic = 3. 5 adc: ib = 0.7 adc vbe(sat) vce(sat) 1.5 2.0 0.8 2.5 vdc vdc .nj semi-ccinltictors reserves the right to change lest conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is helieved to he hoth accurate and reliable at the time ot"going to press. however nj seim-c'iinductiirs assumes no rcspunsihility tor any errors or omissions discovered in its use. n.i .semi-conductor1; enc tnstomeri to verirv 'h;it datasheets lire current helore placing orders.
electrical characteristics (con't) characteristics symbol min. max. unit on characteristics^ (con't) forward-current transfer ratio ic = 0.5 adc; vce = 5.0 vdc ic= 1.0 adc; vce = 5.0 vdc ic = 2.5 adc; vce = 5.0 vdc ic = 3.5 adc; vce = 5.0 vdc collector-emitter sustaining voltage ic = 100 madc 2N3902 2n5157 b* v?_ 25 30 10 5 325 400 90 " vdc dynamic characteristics small-signal short-circuit forward current transfer ratio ic = 0.2 adc; vce = 10 vdc, f = 1 mhz output capacitance vcb = 10 vdc; ie = 0, 100 khz < f < 1.0 mhz ihfel c.bo 2.5 25 250 pf switching characteristics turn-on time vcc = 125 vdc; ic = 1.0 adc; ibi= 0.1 adc turn -off time vcc = 125 vdc; ic = 1.0 adc; im = 0.1 adc; -ib2 = 0.50 adc t on 'off 0.8 1.7 ^ us safe operating area dc tests (continuous) tc = +25c; t > 1.0 s (see figure 3 of mil-prf-19500/371) test 1 vce = 28.6 vdc, ic = 3.5 adc test! vce = 70 vdc, ic = 1.43 adc test3 vce = 325 vdc, ic = 55 madc 2N3902 vce = 400 vdc, ic = 35 madc 2n5157 switching tests load condition c (undamped inductive load) tc= 25c; duty cycle < 10%; rs = 0.1 q (see figure 4 of mil-prf-19500/371) test 1 tp = approximately 3 ms (vary to obtain iq; rbbi = 20 q; vbbi = 10 vdc; reb2 = 3 kq; vbb: = 1.5 vdc; vcc = 50 vdc; ic = 3.5 adc; l = 60 mh; r = 3 q; rl < 14q. test2 tp= approximately 3 ms (vary to obtain iq; rbbi = 100 q; vbbi = 10 vdc, rbb2 = 3 kq; vbb2 = 1.5 vdc; ic = 0.6 adc vcc = 50 vdc; l = 200 mh; r = 8 q; rl < 83q. switching tests load condition (clamped inductive load) tc= +25c; duty cycle < 10%. (see figure 5 of mil-prf-19500/371) testl tp= approximately 30 ms (vary to obtain iq; rs = 0.1 q; rbb1 = 20 q; vbbi = 10 vdc; rbb2 = 100 q; vbb2 = 1.5 vdc; vcc = 50 vdc; ic = 3.5 adc; l = 60 mh; r = 3 q; rl > oq. (a suitable clamping circuit or diode can be used.) clamp voltage = 400 +0, -5 vdc 2N3902 clamp voltage = 500 +0, -5 vdc 2n5157 (clamped voltage must be reached) 3.) pulse test: pulse width = 300(js, duty cycle < 2.0%.


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