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  eu ^ami-donauctoi ^product*., one.. MPF930 mpf960 mpf990 1 source maximum ratings rating drain -source voltage drain-gate voltage gate-source voltage ? continuous ? non-repetitive (tp < 50 u.s) drain current continuous^) pulsed(2) total device dissipation @ta = 25c derate above 25c operating and storage junction temperature range thermal resistance symbol vds vdg vgs vgsm id 'dm pd tj. tstg 9ja MPF930 mpf960 35 60 35 60 20 40 mpf990 90 90 2.0 3.0 1.0 8.0 -55 to 150 125 unit vdc vdc vdc vpk adc watts mvwc c "c/w to-92 (to-226ae) electrical characteristics oa = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage (vgs = o, ld = 10u-adc) MPF930 mpf960 mpf990 gate reverse current (vqs = 15 vdc, vds = ) v(br)dsx 'gss 35 60 90 ? ? ? ? ? ? ? ? 50 vdc nadc on characteristics^) zero-gate-voltage drain current (vds = maximum rating, vqs = 0) gate threshold voltage (ld=1.0madc.vds = vgs) drain-source on-voltage (vgs = 1 vdc) (id = 0.5 adc) MPF930 mpf960 mpf990 (id = 1.0 adc) MPF930 mpf960 mpf990 (id = 2.0 adc) MPF930 mpf960 mpf990 'dss vgs(th) vds(on) ? 1.0 ? ? _ ? ? ? ? ? ? ? ? 0.4 0.6 0.6 0.9 1.2 1.2 2.2 2.8 2.8 10 3.5 0.7 0.8 1.2 1.4 1.7 2.4 3.0 3.5 4.8 uadc vdc vdc 1. the power dissipation of the package may result in a lower continuous drain current. . pulse test: pulse width ^ 300 us, duty cycle z 2.0%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MPF930 mpf96o mpf990 electrical characteristics (ta = 25c unless otherwise noted) (continued) characteristic symbol win typ max unit on characteristics^) (continued) static drain-source on resistance (vgs = 1 0 vdc, id = 1 .0 adc) MPF930 mpf960 mpf990 on-state drain current (vds = 25 vdc, vgs = 1 vdc) rds(on) 'd(on) ? ? ? 1.0 0.9 1.2 1.2 2.0 1.4 1.7 2.0 ? q amps small-signal characteristics input capacitance (vds = 25 vdc, vgs = 0, f = 1 .0 mhz) reverse transfer capacitance (vds = 25 vdc, vgs = o, f = 1 .0 mhz) output capacitance (vds = 25 vdc. vgs = o, f = 1 .0 mhz) forward transconductance (vds = 25 vdc, id = 0.5 adc) ciss crss cqss 9fs ? ? ? 200 70 20 49 380 ? ? ? ? ? pf pf pf mmhos switching characteristics turn-on time ton ? turn-off time toff ? 2. pulse test: pulse width < 300 us, duty cycle < 2.0%. resistive switching +25 v t to sampling scope ?23 50 q input pul^gtnbkaiok v.n^ | r 50 q attenuator -, ^ -f ^ i"5v "f-i t kt '" output ] qj) j ~ ~ 50 10m inverted vut~ l j 1 1 1 ~t - 10v input vjn-*-j 7.0 15 ns 7.0 15 ns -1?1* l ^ j 7c 90% ^\90% / \/ 10%^ ?^ / 90% jr 7^50% pulse 50%\~ width ^n figure 1. switching test circuit figure 2. switching waveforms


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Bristol Electronics

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MPF930
Motorola Semiconductor Products RFQ
41

Jameco Electronics

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MPF930RLRA
2303463
Motorola Semiconductor Products N-Channel Enhancement-Mode TMOS Switching 35V 2A TO-226AE 1: USD0.25
10: USD0.22
100: USD0.19
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340

Quest Components

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MPF930
Motorola Semiconductor Products 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE 49: USD0.33
11: USD0.4125
1: USD0.495
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140
MPF930
Motorola Semiconductor Products 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE 3: USD2.1
1: USD2.8
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MPF930
Motorola Semiconductor Products 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE 10: USD7.49
4: USD8.239
1: USD11.235
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Component Electronics, Inc

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MPF930
Motorola Semiconductor Products IN STOCK SHIP TODAY 1000: USD0.5
100: USD0.58
1: USD0.77
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508

Perfect Parts Corporation

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MPF930
Motorola Semiconductor Products RFQ
21

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