cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 1/6 hqn2 498qf preliminar y c y s tek product s pecification quadruple high voltage npn ep itaxial planar transistor built-in base resistor HQN2498QF description ? high breakdown voltage. (bv ceo =400v) ? low saturation voltage, typical v ce(sat) =0.13v at ic/i b =20ma/1ma. ? complementary to hqp1498qf ? pb-free package equivalent circuit outline HQN2498QF sop-10 the following ratings and characteristics apply to each transistor in this device. absolute maximum ratings (ta=25 c) parameter symbol limits unit collecto r -b ase v o ltage v cbo 400 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current i c 300 ma total power dissipation pd 1.5 w junction temperature tj 150 c storage temperature tstg -55~+150 c http://
cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 2/6 hqn2 498qf preliminar y c y s tek product s pecification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 400 - - v i c =50 a bv ceo 400 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =400v i cer - - 10 na v ce =300v, r eb =4k i ebo - - 100 na v eb =6v *v ce(sat) - 0.13 0.18 v i c =20ma, i b =1ma *v ce(sat) - 0.11 0.18 v i c =50ma, i b =5ma *v ce(sat) - 0.16 0.3 v i c =100ma, i b =10ma *v be(sat) - - 3.7 v i c =20ma, i b =2ma *h fe 50 - 270 - v ce =10v, i c =10ma *h fe 50 - - - v ce =10v, i c =100ma r 0.7 - 1.3 k - f t - 100 - mhz v ce =10v, i c =10ma, f=5mhz cob - 13 - pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping marking HQN2498QF sop-10 (pb-free) 3000 pcs / tape & reel n2498
cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 3/6 hqn2 498qf preliminar y c y s tek product s pecification characteristic curves cu rre n t g i a n vs c ol l e c t or c urre n t 10 10 0 1 10 10 0 10 00 c o l l e c t o r c u rre n t ---ic ( m a ) c u rr e n t g a i n ---h f e vce = 5v vce = 10v s a t ura t i on v ol t a ge vs co l l e c t or curre nt 10 100 1 000 10 000 100 000 1 10 100 1000 c o l l e c t o r c u r re n t -- -ic (ma ) s a t u ra t i o n v o l t a g e ---(mv ) vce(sat) @ ic =10ib vce ( sat ) @ ic = 20ib s a t u ra t i on v ol t a ge v s c o l l e c t o r cu rre nt 100 100 0 1000 0 1 10 1 00 1000 c o l l e c t or c u rre n t ---ic (ma ) s a tu r a ti o n vo lta g e - - - ( m v) vbe(sat) ic=10ib ic=20ib p o w e r d e ra t i n g curv e 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 0 5 0 1 00 150 200 a m b i e n t t e mp e r a t u r e ---t a ( ) p o w e r d i s s i p a t i o n - --p d (w ) t o t a l po w e r di s s i pa t i o n per package power dissipation per transistor
cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 4/6 hqn2 498qf preliminar y c y s tek product s pecification reel dimension carrier tape dimension
cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 5/6 hqn2 498qf preliminar y c y s tek product s pecification recommended wave solderirecommend ed wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys t ech electronics corp. s pec. no. : c899 qf issued date : 20 09.1 1.09 revised date : 2 009.12.23 page no. : 6/6 hqn2 498qf preliminar y c y s tek product s pecification sop-10 dimension inches millimeters inches millimeters dim min. max. min. max. marking: 10-lead sop-10 plastic surface mounted package cystek package code: qf n2498 dim min. max. min. max. a 0.2283 0.2441 5.80 6.20 m 0.0039 0.0098 0.10 0.25 b 0.1990 0.1969 4.80 5.00 h 0. 0118 0.0173 0.30 0.44 c 0.1496 0.1575 3.80 4.00 l 0.0531 0.0689 1.35 1.75 d 0 8 0 8 j 0.0148 ref. 0.375 ref. e 0.0157 0.0354 0.40 0.90 k 45 typ. 45 typ. f 0.0075 0.0098 0.19 0.25 g 0.0394 1.00 typ. notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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