inchange semiconductor isc product specification isc silicon npn power transistor BUW133H description high switching speed collector-emitter sustaining voltage- : v ceo(sus) = 450v applications designed for use in very fast switching applications in inductive circuits. absolute maximum ratings(t a =25 ) symbol parameter max unit v ces collector- emitter voltage (v be = 0) 850 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 6 v i c collector current-continuous 15 a i cm collector current-peak 20 a i b b base current 10 a i bm base current-peak 15 a p c collector power dissipation @t c =25 135 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.93 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUW133H electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a ; i b = 0; l= 10mh 450 v v ce(sat)-1 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 2.5 v v ce(sat)-2 collector-emitter saturation voltage i c = 10a; i b = 1a 3.0 v v be(sat) base-emitter saturation voltage i c = 10a; i b = 1a 1.5 v i cev collector cutoff current v ce =v cesmmax ;v be =-1.5v v ce =v cesmmax ;v be =-1.5v;t j =100 0.25 1.5 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1 ma h fe dc current gain i c = 15a ; v ce = 5v 7 c ob output capacitance i e = 0 ; v cb = 10v; f test = 1khz 400 pf switching times , resistive load t on turn-on time 0.4 s t stg storage time 1.3 s t f fall time i c = 10a ;i b1 = 1a;i b2 = -2a 0.15 s isc website www.iscsemi.cn
|
