r07ds0652ej0200 rev.2.00 page 1 of 6 aug 24, 2012 preliminary datasheet rjk0601dpn-e0 n-channel mos fet 60 v, 110 a, 3.1 m ? features ? high speed switching ? low drive current ? low on-resistance r ds(on) = 2.5 m ? typ. (at v gs = 10 v) ? package to-220ab outline 1. gate 2. drain 3. sourc e 4. drain (package name: to-220ab) 1 2 3 4 renesas package code: prss0004ag-a d 2, 4 g1 s 3 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 110 a drain peak current i d (pulse) note1 330 a body-drain diode reverse drain current i dr 110 a avalanche current i ap note2 55 a avalanche energy e as note2 227 mj channel dissipation pch note3 200 w channel to case thermal impedance ? ch-c 0.63 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at l = 100 ? h, tch = 25 ?c, rg ? 50 ? , 3. tc = 25 ?c r07ds0652ej0200 rev.2.00 aug 24, 2012
rjk0601dpn-e0 preliminary r07ds0652ej0200 rev.2.00 page 2 of 6 aug 24, 2012 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10ma, v gs = 0 gate to source leak current i gss ? ? 0.1 ? a v gs = ? 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 4.0 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 2.5 3.1 m ? i d = 55 a, v gs = 10 v note4 forward transfer admittance |y fs | ? 120 ? s i d = 55 a, v d = 10 v note4 input capacitance ciss ? 10000 ? pf output capacitance coss ? 2150 ? pf reverse transfer capacitance crss ? 500 ? pf v ds = 10 v v gs = 0 f = 1 mhz gate resistance rg ? 1.6 ? ? total gate charge qg ? 141 ? nc gate to source charge qgs ? 50 ? nc gate to drain charge qgd ? 25 ? nc v dd = 25 v v gs = 10 v, i d = 55 a turn-on delay time t d(on) ? 53 ? ns rise time t r ? 27 ? ns turn-off delay time t d(off) ? 100 ? ns fall time t f ? 29 ? ns v gs = 10 v i d = 55 a v dd ? 30 v rg = 4.7 ? body-drain diode forward voltage v df ? 0.85 1.5 v i f = 110 a, v gs = 0 note4 body-drain diode reverse recovery time t rr ? 65 ? ns i f = 110 a, v gs = 0 di f /dt = 100 a/ ? s notes: 4. pulse test
rjk0601dpn-e0 preliminary r07ds0652ej0200 rev.2.00 page 3 of 6 aug 24, 2012 main characteristics 250 200 150 100 50 0 50 100 150 200 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 100 80 60 40 20 0 2468 channel dissipation pch (w) case temperature tc (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 150 100 0 50 4 8 12 16 20 1 10 100 1000 1 10 100 0.1 gate to source voltage v gs (v) drain to source saturation voltage v ds(on) (mv) drain current i d (a) drain to source on state resistance r ds(on) (m) drain to source on state resistance vs. drain current 300 250 200 v gs = 10 v pulse test 100 10 1 0.1 1 10 100 0.01 0.1 1000 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area v gs = 4.6 v pulse test 5 v 6 v 7 v 5.4 v 10 v tc = 75c 25c ?25c v ds = 10 v pulse test drain to source saturation voltage vs. gate to source voltage i d = 10 a pulse test 50 a 25 a tc = 25c 1 shot pulse operation in this area is limited by r ds(on) pw = 10 ms 10 s 100 s 1 ms dc operation
rjk0601dpn-e0 preliminary r07ds0652ej0200 rev.2.00 page 4 of 6 aug 24, 2012 10 8 6 4 2 ? 25 0 25 50 75 100 125 150 0 case temperature tc (c) drain to source on state resistance r ds(on) (m) drain to source on state resistance vs. temperature 0.1 10 1 100 100000 10000 1000 100 v gs = 0 f = 1 mhz ciss coss crss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage pulse test v ds = 10 v i d = 50 a 0 0.5 1.0 1.5 2.0 100 40 v gs = 0 v 10 v source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) pulse test 100 50 150 250 200 25 50 100 150 75 125 0 channel temperature tch ( c) maximum avalanche energy vs. channel temperature derating avalanche energy e as (mj) i ap = 55 a v dd = 20 v duty < 0.1% rg 50 20 60 80 0 20 16 12 8 4 40 80 120 160 200 gate charge qg (nc) gate to source voltage v gs (v) dynamic input characteristics v dd = 10 v 25 v 50 v i d = 55 a
rjk0601dpn-e0 preliminary r07ds0652ej0200 rev.2.00 page 5 of 6 aug 24, 2012 vin monitor d.u.t. vin 10 v r l v dd = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 25 90% 10% t f switching time test circuit waveform 0.3 0.1 0.03 0.01 10.0 1 3 100 1 m 10 m 100 m 1 10 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width dm p pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 0.63c/w, tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
rjk0601dpn-e0 preliminary r07ds0652ej0200 rev.2.00 page 6 of 6 aug 24, 2012 package dimensions unit: mm sc-46 2.1g mass[typ.] to-220abs prss0004ag-a renesas code jeita package code previous code package name to-220ab 9.9 0.2 4.5 0.2 2.8 0.1 15.7 0.2 9.2 0.2 13.08 0.20 0.80 0.10 2.6 max 1.62 max 10.0 0.2 2.54 2.54 (3.00) 3.6 0.2 1.30 + 0.10 ? 0.05 0.50 + 0.10 ? 0.05 ordering information orderable part number quan tity shipping container RJK0601DPN-E0-T2 50 pcs magazine (tube) note: the symbol of 2nd "-" is occasionally presented as "#".
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