,j cx lj , li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUY78 description ? collector-emitter breakdown voltage- : v(br)ceo=300v(min.) ? low collector-emitter saturation voltage- :vce(sat)=1.4v(max.)@lc=5a applications ? designed for use as high-speed power switches at high voltages. absolute maximum ratings(ta=25'c) symbol vcbo voes vceo vebo ic icm pc t, tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @tc=75'c junction temperature storage temperature range value 600 600 300 7 8 10 60 175 -65-175 unit v v v v a a w ?c r thermal characteristics symbol rth j-c parameter max thermal resistance.junction to case 1 .66 unit r/w 3 i pin 1.base n*. 3. collect or (case) ' to-3 package i t-e f h*"** n"p*i i ? ' i -ju-dapi. f s^\ y ? $5 ^^ vfs^ "i-ng inn dltt mih tu a 3900 b 2530 26 c ?90 8, 0 090 1 e 140 1. k 546 k 1ho 13 l 1675 17 n 19.40 19 0 400 4 u 30.00 30 v 430 4 ^ c ! ? i t o tj u( 67 30 10 60 50 05 62 20 50 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistors BUY78 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ces v(br)cev v(br)ebo vce(sat) vbe(sat) icbo ices hfe fr tf parameter collector-emitter breakdown voltage collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current dc current gain current-gain ? bandwidth product fall time conditions lc=0.1a; ib=0 lc=1ma;le=0 lc=1ma; vbe=-3.5v le=1ma; lc=0 ic=5a;ib=1.25a ic=5a;ib=1.25a vcs= 400v; ie= 0 vce= 400v; vbe= 0; tc= 150"c lc=5a;vce=1.5v lc=0.5a; vce=10v lc=3a;lbi=-lb2=0.6a min 300 600 600 7 5 typ. 15 max 1.4 1.7 1.0 15 1.0 unit v v v v v v ma ma mhz i.1 s
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