s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max -30v -8a 18 @ vgs=-4.5v 12.5 @ vgs=-10v p-channel enhancement mode field effect transistor www.samhop.com.tw jan,29,2014 1 details are subject to change without notice. SP4401 green product thermal characteristics 75 thermal resistance, junction-to-ambient r ja c/w symbol v ds v gs i dm a i d units parameter -30 -8 -46 v v 20 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed c a t a =25 c w p d c 1.67 -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c -6.4 a t a =70 c 1.07 w a a features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. esd protected. c ver 1.0 4 3 2 1 d d d d g s s 5 6 7 8 s tson 3.3 x 3.3 pin 1 30 e as single pulse avalanche energy d mj
SP4401 v gs = 20v , v ds =0v -30 -1 10 -1.0 13 24 3545 394 289 58 50 176 45 v ds =-15v,v gs =0v v dd =-15v i d =-1a v gs =-10v r gen = 6 ohm v gs =-4.5v , i d =-3a v ds =-10v , i d =-4a v ds =-24v , v gs =0v v gs =0v , i d =-250ua -1.6 -3.0 18 symbol min typ max units bv dss v i gss ua v gs(th) v g fs s c iss pf c oss pf c rss pf t d(on) ns t r ns t d(off) ns t f ns switching characteristics rise time turn-off delay time fall time turn-on delay time m ohm input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage reverse transfer capacitance on characteristics b b 59 q g nc total gate charge v ds =-15v,i d =-4a,v gs =-10v www.samhop.com.tw jan,29,2014 2 5 14 nc q gs nc q gd gate-drain charge gate-source charge v ds =-15v,i d =-4a, v gs =-10v drain-source diode characteristics v gs =0v,i s =-1a -0.8 v sd diode forward voltage -1.2 v notes f=1.0mhz v ds =v gs , i d =-250ua v ds =-15v,i d =-4a,v gs =-4.5v 28 nc a.surface mounted on fr4 board of 1 inch 2 , 1oz. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) 10 v gs =-10v , i d =-4a 12.5 m ohm ver 1.0
www.samhop.com.tw jan,29,2014 3 tj( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature SP4401 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = -4 .5v 24 18 12 6 0 0.5 3.0 2.5 2.0 1.5 1.0 -55 c tj=125 c 30 25 20 15 10 5 1 1 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 100 80 60 40 20 v g s = -10v v gs = - 4.5v v gs = - 10v i d = -4 a v gs = -4. 5v i d = -3a v ds = v gs i d = -250ua i d = - 2 50ua v gs = -3 v v gs = -3 .5v v gs = -4 v v gs = -10 v 0 30 25 c v gs = -2 .5v ver 1.0
www.samhop.com.tw jan,29,2014 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current SP4401 0.1 1 10 30 10 1 0.1 0.03 36 30 24 18 12 6 0 2 0 10 8 6 4 i d = -4a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 10 8 6 4 2 0 75 c 125 c v ds = -15v i d = -4a 0 64 48 16 32 v gs = -10v single pulse t a = 25 c 25 c 56 40 8 24 ver 1.0 100 1 0 0m s dc 1 ms 1 00us 10 s r d s (o n) l im i t 1s 100 10 1000 1 110 100 td(off ) vds=-15v,id=-1a vgs=-10v td(on) tr tf crss coss ciss 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 3500 4000
SP4401 ver 1.0 www.samhop.com.tw jan,29,2014 5 pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 1oz single pulse t p v (br )dss i as f igure 13b. o fr m w ave s u nc l am p ed in d u ct i ve f igure 13a. u nc l am p ed s in d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v
SP4401 www.samhop.com.tw jan,29,2014 6 package outline dimensions ver 1.0 tson 3.3 x 3.3 symbols millimeters a b c d d1 d2 d3 e e1 e2 min. nom. max. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e h l l1 m 2.39 2.49 0.65 bsc 0.30 0.39 0.30 0.40 0.13 10 o 2.59 0.50 0.50 12 o d d1 d3 e l1 m c a e1 e 0 d2 b l h e2 pin 1 0.15 0
ver 1.0 www.samhop.com.tw jan,29,2014 7 SP4401 tson 3.3 x 3.3 tape and reel data tson 3.3 x 3.3 tape tson 3.3 x 3.3 reel unit: @ package s mini 8 h1 d d1 ee1e2 h pp1 p2 t 3.70 ? 1.50 ? 1.50 1.10 2 0.10 4.0 2 0.10 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size a b c d n w1 w2 330 2 ! 1.0 1.5 feeding direction 2 0.10 (min) +0.10 - 0.00 12.0 +0.30 - 0.10 1.75 2 0.10 5.50 2 0.05 3.70 2 0.10 k 8.0 2 0.10 a n w1 w2 d b c 13 " + 0.5 - 0.2 ? 13.0 + 0.5 - 0.2 20.2(ref.) 178 + 0.0 - 2.0 12.4 + 2.0 - 0.0 18.4(ref.) d1 p2 p1 e e1 e2 p d a a b b h1 t k h section a-a section b-b
top marking definition tson 3.3 x 3.3 4401 xxxxxx product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP4401 www.samhop.com.tw jan,29,2014 8 ver 1.0
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