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  click to buy demo (http://www.verypdf.com) information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? improved ? direct ? replacement ? for ? siliconix ? & ? national ? 2N5564 ? high ? gain ? 7500mho ? minimum ? low ? ?on? ? resistance ? 100 ?? maximum ? absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +200c ? operating ? junction ? temperature ?\ 55c ? to ? +125c ? maximum ? power ? dissipation ? device ? dissipation ? (each ? transistor) ? 325mw ? continuous ? power ? dissipation ? (total) ? 650mw ? maximum ? currents ? gate ? current ? 50ma ? maximum ? voltages ? gate ? to ? drain ?\ 40v ? gate ? to ? source ?\ 40v ? gate ? to ? gate ? 80v ? ?? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v gs1 ? ? ? v gs2 ? | ? differential ? gate ? to ? source ? cutoff ? voltage ? \\? \\? 5 ? mv ? v dg ? = ? 15v, ? i d ? = ? 2ma ?????????? ? ? |v gs1 ? ? ? v gs2 ? | ? / ?? t ? ? differential ? gate ? to ? source ? cutoff ?? voltage ? change ? with ? temperature ? \\? \\? 10 ? v/c ? v dg ? = ? 15v, ? i d ? = ? 2ma ?????? t a ? = ?\ 55c ? to ? +125c ? i dss1 ?? / ? i dss2 ? ? gate ? to ? source ? saturation ? current ? ratio ? 0.95 ? \\? 1 ? % ? v ds ? = ? 10v, ? v gs ? = ? 0v ? |i g1 ? ? ? i g2 ? | ? differential ? gate ? current ? \\? \\? 20 ? na ? v dg ? = ? 10v, ? i d ? = ? 5ma ?????? t a ? = ? +125c ?? g fs1 ? / ? g fs2 ? ? forward ? transconductance ? ratio 2 ? 0.95 ? \\? 1 ? % ? v ds ? = ? 15v, ? i d ? = ? 2ma, ? f ? = ? 1khz ? ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv gss ? gate ? to ? source ? breakdown ? voltage ?\ 40 ? \\? ? ? v ? ? i g ? = ?\ 1a, ? v ds ? = ? 0v ? v gs ( off ) ? gate ? to ? source ? cutoff ? voltage ?\ 0.5 ? \\? \ 3 ? v ds ? = ? 15v, ? i d = ? 1na ? v gs ( f ) ? gate ? to ? source ? forward ? voltage ? \\? \\? 1 ? i g ? = ?? 2ma, ? v ds ? = ? 0v ? i dss ? gate ? to ? source ? saturation ? current 3 ? 5 ? \\? 30 ? ma ? v ds ? = ? 15v, ? v gs ? = ? 0v ? i gss ? gate ? leakage ? current 3 ? \\? \\? \ 200 ? na ? v gs ? = ?\ 20v, ? v ds ? = ? 0v, ? 150c ? g fs ? forward ? transconductance ? 7500 ? \\? 12500 ?? s ? ? v dg ? = ? 15v, ? i d = ? 2ma, ? f ? = ? 1khz ? 7000 ? \\? \\? v dg ? = ? 15v, ? i d = ? 2ma, ? f ? = ? 100mhz ? g os ? output ? conductance ? \\? \\? 45 ? v dg ? = ? 15v, ? i d = ? 2ma, ? f ? = ? 1khz ? c iss ? input ? capacitance ? \\? \\? 5 ? pf ? ? v dg ? = ? 15v, ? i d = ? 2ma, ? f ? = ? 100mhz ? c rss ? reverse ? transfer ? capacitance ? \\? \\? 12 ? nf ? noise ? figure ? \\? \\? 1 ? db ? v dg ? = ? 15v, ? i d ? = ? 2ma, ? f ? = ? 10hz, ? r g ? = ? 1m ? _ ? e n ? equivalent ? input ? noise ? voltage ? \\? ? \\? ? 50 ? ? nv/ hz ? v dg ? = ? 15v, ? i d ? = ? 2ma, ? f ? = ? 10hz ? ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired ????? 2. ? pulse ? test: ? pw ?? 300s ? duty ? cycle ?? 3% 3. ? assumes ? smaller ? value ? in ? numerator ? ? ? 2N5564 monolithic dual n-channel jfet linear s y stems re p laces discontinued siliconix & national 2N5564 2N5564 applications: ? wideband differential amps ? high-speed,temp-compensated single- ended input amps ? high-speed comparators ? impedance converters and vibrations detectors . the 2N5564 are monolithic dual jfets. the monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. these devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. the 2N5564 is a direct replacement for discontinued siliconix and national 2N5564. the hermetically sealed to-71 is well suited for military and harsh environment applications. (see packaging information). please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx to-71 (top view) available packages: 2N5564 in to-71 2N5564 available as bare die this is trial version if you want get full version, please register it, thank you. www.verypdf.com demo (http://www.verypdf.com) demo (http://www.verypdf.com)


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Price & Availability of 2N5564
Newark

Part # Manufacturer Description Price BuyNow  Qty.
2N5564
13C2013
Vishay Intertechnologies Transistor; Gate Source Breakdown Voltage Max:-40V; Zero Gate Voltage Drain Current Max:30Ma; Gate Source Cutoff Voltage Max:-3V; No. Of Pins:6 Pin; Operating Temperature Max:150°C; Channel Type:N Channel; Product Range:- Rohs Compliant: No |Vishay 2N5564 BuyNow
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DigiKey

Part # Manufacturer Description Price BuyNow  Qty.
2N5564 TO-71 6L ROHS
4004-2N5564TO-716LROHS-ND
Linear Integrated Systems JFET 2N-CH 40V TO71 1000: USD6.97173
500: USD7.60076
100: USD8.387
10: USD9.698
1: USD11.01
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Bristol Electronics

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ComSIT USA

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NAC

Part # Manufacturer Description Price BuyNow  Qty.
2N5564-TO-71
Linear Integrated Systems Low Noise, Monolithic Dual, N-Channel JFET 1: USD7.58
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1000: USD6.85
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Sensible Micro Corporation

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ES Components

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