2003. 12. 12 1/3 semiconductor technical data ktb1260 epitaxial planar pnp transistor revision no : 2 general purpose application. features 1w (mounted on ceramic substrate). small flat package. complementary to ktd1898. maximum rating (ta=25 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 ) note : h fe classification o:70 140, y:120 240, gr:200 400 * mounted on ceramic substrate(250mm 2 0.8t) q type name h rank fe lot no. marking characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -1 a emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 a collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -80 - - v dc current gain h fe (note) v ce =-3v, i c =-100ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.4 v transition frequency f t v ce =-5v, i c =-50ma, f=30mhz - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 25 - pf characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -1 a emitter current i e 1 a collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 storage temperature range t stg -55 150
2003. 12. 12 2/3 ktb1260 revision no : 0 c -0.1 0 base-emitter voltage v (v) i - v c collector current i (ma) -1 -10 -100 -1k -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 be be ta=25 c v =-5v ce collector-emitter voltage v (v) collector current i (ma) 0 c ce ce c i - v -0.2 -0.4 -0.6 -0.8 -1.0 dc current gain h collector current i (ma) 10 c h - i fe 100 20 200 50 500 1k fe c v =-3v ce v =-1v ce collector saturation ce(sat) -0.01 collector current i (ma) c c ce(sat) v - i voltage v (v) -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 i /i =20 c b i /i =10 b c ta=25 c transition frequency f (mhz) t 1 emitter current i (ma) c f - i t e 1 2 5 10 20 50 100 200 500 1k 2 5 10 20 50 100 200 500 1k ta=25 c v =-5v ce collector output capacitance c (pf) -0.1 1 10 -0.2 ob 100 2 20 200 5 50 500 1k collector-base voltage v (v) -10 -0.5 -1 -5 -2 cb -20 -50 -100 c - v ob cb ta=25 c f=1mhz i =0a e 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -1 -10 -100 -1k -2 -20 -200 -5 -50 -500 -2k -0.3ma -0.4ma -0.25ma -0.35ma -0.45ma -0.2ma -0.15ma -0.1ma -0.05ma i =0ma b ta=25 c -1 -10 -100 -1k -2 -20 -200 -5 -50 -500 -2k
2003. 12. 12 3/3 ktb1260 revision no : 0 collector power dissipation pc (w) 0 0 ambient temperature ta ( c) pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 mounted on ceramic substrate (250mm x 0.8t) ta=25 c 2 1 2 1 2 (continuous) dc operation collector-emitter voltage v (v) safe operating area collector current i (a) -1m -3m -30m -3 -10m -100m -300m -1 c ce -0.1 -0.3 -1 -3 -10 -30 -100 100ms * pw=10ms * i max. i (pulse) max. * c c * single nonrepetitve curves must be derated linearly with increase in temperature pulse ta=25 c
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