s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t p - ch an n el m osf et nt m s 10p 02r2 ( k tm s 1 0 p 0 2 r 2 ) f e a tu r e s v d s ( v ) = - 2 0 v i d = - 1 0 a ( v g s = - 1 0 v ) r d s ( o n ) 1 4 m ( v g s = - 4 . 5 v ) r d s ( o n ) 2 0 m ( v g s = - 2 . 5 v ) d i o d e e x h i b i t s h i g h s p e e d , s o f t r e c o v e r y sop -8 0.21 +0.04 -0.02 1.50 0.15 d s g a b s o l u te m a x i m u m ra ti n g s t a = 2 5 n o t e . 1 : p u l s e t e s t : p u l s e w i d t h < 3 0 0u s , d u t y c y c l e < 2 % . n o t e . 2 : v d d = ? 2 0 v , v g s = ? 4 . 5 v , p e a k i l = 5 a , l = 4 0 m h , r g = 2 5 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain s y m b o l 1 0 s e c o n d s s t e a d y s t a t e u n i t v d s v g s t a = 2 5 - 1 0 - 8 . 8 t a = 7 0 - 8 - 6 . 4 - 5 . 5 - 4 . 5 i d m - 5 0 - 4 4 p o w e r d i s s i p a t i o n t a = 2 5 2 . 5 1 . 6 0 . 6 0 . 4 a v a l a n c h e e n e r g y ( n o t e . 2 ) t j = 2 5 c e a s m j r t h ja 5 0 8 0 / w t j t l t st g g a t e - s o u r c e v o l t a g e v a w c o n t i n u o u s d r a i n c u r r e n t m a x i m u m o p e r a t i n g d r a i n c u r r e n t i d j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e 1 5 0 - 5 5 t o 1 5 0 p a r a m e t e r p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t - 2 0 1 2 d r a i n - s o u r c e v o l t a g e 5 0 0 l e a d t e m p e r a t u r e f o r s o l d e r i n g p u r p o s e s 2 6 0 m a x i m u m o p e r a t i n g p o w e r d i s s i p a t i o n p d j u n c t i o n t e m p e r a t u r e
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t p - ch an n el m osf et nt m s 10p 02r2 ( k tm s 1 0 p 0 2 r 2 ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 2 5 0 a , v g s = 0 v - 2 0 v v d s = - 2 0 v , v g s = 0 v , t j = 2 5 - 1 v d s = - 2 0 v , v g s = 0 v , t j = 7 0 - 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 2 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s i d = - 2 5 0 a - 0 . 6 - 1 . 2 v v g s = - 4 . 5 v , i d = - 1 0 a 1 4 v g s = - 2 . 5 v , i d = - 8 . 8 a 2 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 1 0 v , i d = - 1 0 a 3 0 s i n p u t c a p a c i t a n c e c i ss 3 1 0 0 3 6 4 0 o u t p u t c a p a c i t a n c e c o ss 1 1 0 0 1 6 7 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 4 7 5 1 0 1 0 t o t a l g a t e c h a r g e q g 4 8 7 0 g a t e s o u r c e c h a r g e q g s 6 . 5 g a t e d r a i n c h a r g e q g d 1 7 t u r n - o n d e l a y t i m e t d ( o n ) 2 5 3 5 t u r n - o n r i s e t i m e t r 4 0 6 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 1 0 1 9 0 t u r n - o f f f a l l t i m e t f 1 1 0 1 9 0 t u r n - o n d e l a y t i m e t d ( o n ) 2 5 t u r n - o n r i s e t i m e t r 1 0 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 0 0 t u r n - o f f f a l l t i m e t f 1 2 5 t r r 6 5 1 0 0 t a 2 5 t b 4 0 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 7 5 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s - 1 0 a i s = - 2 . 1 a , v g s = 0 v - 0 . 7 2 - 1 . 2 i s = - 2 . 1 a , v g s = 0 v , t j = 1 2 5 - 0 . 6 i s = - 1 0 a , v g s = 0 v - 0 . 9 i s = - 1 0 a , v g s = 0 v , t j = 1 2 5 - 0 . 7 5 n s d i o d e f o r w a r d v o l t a g e v s d v v g s = 0 v , v d s = - 1 6 v , f = 1 m h z v g s = - 4 . 5 v , v d s = - 1 0 v , i d = - 1 0 a v g s = - 4 . 5 v , v d s = - 1 0 v , i d = 1 0 a , r g = 6 b o d y d i o d e r e v e r s e r e c o v e r y t i m e i f = - 2 . 1 a , v g s = 0 , d i / d t = 1 0 0 a / s p f n c z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s a m v g s = - 4 . 5 v , v d s = - 1 0 v , i d = 1 a , r g = 6 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e m a r k i n g 1 0 p 0 2 k c * * * * m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et nt m s 10p 02r2 ( k tm s 1 0 p 0 2 r 2 ) t y p i c a l ch a r a c te r i s i ti c s figure 1. on ? region characteristic s ?v d s , drai n ? t o ? source vo l t age (vo l ts ) 20 15 10 5.0 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 ?i d , drain curren t (amps ) figure 2. t ransfer characteristics ?v g s , ga te ?t o ? source vo l t age (vo l ts ) 2.5 2.0 1.5 1.0 0.5 0 10 8.0 6.0 4.0 2.0 0 0 figu re 3 . on ? res i s t a n ce vers u s gate ?t o ? source v oltag e ?v g s , ga te ?t o ? source vo l t age (vo l ts ) 0.100 0.075 0.050 0.025 10 8.0 6.0 4.0 2.0 0 r ds(on) , drain? t o?source resis t ance (ohms ) figure 4. on-resistance versus drain current and gate v oltage ?i d , drain current (amps) 18 14 10 6.0 0.016 0.012 r ds(on) , drain? t o?source resis t ance (ohms ) 0.008 0 0.020 figu re 5 . on ? res is ta n ce v ar ia tion with t emperature t j , junction tempera ture ( c) 1.6 1.4 1.2 1.0 0.8 150 125 100 75 50 25 0 ?25 ?50 figure 6. drai n ? t o ? source leakage curren t versus v oltage ?v d s , drai n ? t o ? source vo l t age (vo l ts ) 18 14 10 6.0 2.0 1000 100 ?i dss , leakage (na) 10 0.6 10,000 ?i d , drain curren t (amps ) v d s ? 10 v t j = ? 5 5 c 25 c 100 c i d = ? 10 a t j = 2 5 c t j = 2 5 c v g s = ? 2.5 v v g s = ? 4.5 v r ds(on) , drain? t o?source resis t ance (normalized ) i d = ? 10 a v g s = ? 4.5 v t j = 12 5 c v g s = 0 v t j = 10 0 c t j = 2 5 c v g s = ? 1.7 v ? 1 . 9 v ? 2 . 1 v ? 2 . 3 v ? 3 . 1 v ? 10 v
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et nt m s 10p 02r2 ( k tm s 1 0 p 0 2 r 2 ) t y p i c a l ch a r a c te r i s i ti c s ga te ?t o ? source or drai n ? t o ? source vo l t age (vo l ts ) c, cap acit ance (pf) 2000 8000 figure 7. capacitance v ariation 10 0 5.0 10 5.0 t j = 2 5 c c is s c o s s c r s s 15 20 0 4000 6000 c is s c r s s v g s = 0 v v d s = 0 v ?v d s ?v g s 10,000 figu re 8 . g a t e ? t o ? s ou rce a nd dra i n ? t o ?source v oltage versus t otal charge r g , ga te resist ance (ohms) 0 0 1 0 1 0 . 1 100 10 t, ti me (ns ) v d d = ? 10 v i d = ? 1.0 a v g s = ? 4.5 v t r t d(on ) figure 9. resistive switching t ime v ariation versus gate resistance 10 ?v gs , ga te ?t o ? source vo l t age (vo l ts ) 2.0 0 0 1.0 0 q g , t ot al ga te charge (nc) ?v ds , dr ai n ? t o ? source vo l t age (vo l ts ) 5.0 10 20 40 i d = ? 10 a t j = 2 5 c 30 v d s v g s q2 q3 q1 1000 t f 3.0 2.0 4.0 6.0 4.0 8.0 qt 50 t d(o f f ) r g , ga te resist ance (ohms) 0 0 1 0 1 0 . 1 100 10 t, ti me (ns ) v d d = ? 10 v i d = ? 10 a v g s = ? 4.5 v t r t d(on ) figure 10. resistive switching t ime v ariation versus gate resistance 1000 t f t d(o f f ) 0.50 0.55 0.60 0.65 0 0.4 0.8 ?v s d , s o urc e ? t o ? drain vo l t age (vo l ts ) figure 1 1. diode forward v oltage versus current ? i s , source current (amps) 2.0 v g s = 0 v t j = 2 5 c 1.2 0.70 1.6 figure 12. maximum rated forward biased safe operating area 0.1 ?v d s , drai n ? t o ? source vo l t age (vo l ts ) 0.1 1.0 ?i d , drain current (amps) r ds(on ) limi t thermal limi t p ackage limi t v g s = 2 . 5 v sin gl e p ul se t c = 2 5 c 10 dc 1.0 100 100 10 10 m s 1.0 m s 100 s
s m d ty p e w w w . k e x i n . c o m . c n 5 m osf e t p - ch an n el m osf et nt m s 10p 02r2 ( k tm s 1 0 p 0 2 r 2 ) t y p i c a l ch a r a c te r i s i ti c s figure 13. diode reverse recovery w aveform di/dt t r r t a t p i s 0.25 i s time i s t b t yp i ca l e l ec tr i ca l charac t er is tic s figure 14. thermal response t, time (s) rthja(t) , effective transient thermal resist ance 1.0 0.1 0.01 d = 0 . 5 sin gl e p ul se 1.0e?05 1.0e ?04 1.0e ?03 1.0e?02 1.0e ?01 1.0e+00 1.0e+01 0.2 0.05 0.01 1.0e+02 1.0e+03 0.001 10 0.0163 0.0652 0.1988 0.641 1 0.9502 72.416 f 1.9437 f 0.5541 f 0.1668 f 0.0307 f chip ambient normalize d to ja at 10s . 0.1 0.02
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