1 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com key features and performance ? frequency range: dc to 35ghz linear ? 40gb/s optical m odulator driver ? 12db small signal gain ? 17 dbm typical output power (4vpp) ? 3db gain adjustment ? < 15ps edge rates ? 4vpp 40gb/s nrz prbs linear ? 0.15um phemt technology ? bias: vd = 5v, id = 135 ma ? chip size: 1.79 x 1.00 x 0.1 mm (0.70 x 0.39 x 0.004 in) primary applications ? test equipment ? ultra wideband ? 40gb/s nrz eam driver ? 40gb/s nrz predriver or gain block product description the triquint tga4832 is a medium power wideband agc amplifier which operates from dc to 35 ghz. typical small signal gain is 12db with 3db agc range. typical input and output return losses are >10db. the tga4832 provides 18 dbm of output power at 1 db gain compression. drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. two stages in cascade demonstrate 3.8vpp output voltage swing with 350mv at the input when stimulated with 40gb/s 2^31-1prbs nrz data. rf ports are dc coupled enabling the user to customize system corner frequencies. the tga4832 requires off-chip decoupling and blocking components. the tga4832 is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, and jammers. it is also an excellent choice for 40gb/s nrz applications. the tga4832 is capable of driving an electro-absorptive optical modulator (eam) with electrical non-return to zero (nrz) data. in addition, the tga4832 may also be used as a predriver or a receive gain block. bond pad and backside metallization is gold plated for compatibility with eutectic a lloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in die form. lead free & rohs compliant. measured performance bias conditions: vd = 5v, id = 135ma dc - 35 ghz wideband amplifier datasheet subject to change without notice
2 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter v+ vd notes positive supply voltage biased thru on-chip drain termination biased thru the rf output port using a bias tee 10.4 v - - 6 v 2 /, 3 / positive supply current biased thru on-chip drain termination biased thru the rf output port using a bias tee 135 ma - - 150 ma 3 / power dissipation biased thru on-chip drain termination biased thru the rf output port using a bias tee 1.4 w - - 0.9 w 3 /, 4 / vg | ig | negative gate voltage range gate current +1v to ?3 v 10 ma vctrl | ictl | control gate voltage range gate current vd/2 to ?3v 10 ma 5 / p in vin rf input sinusoidal continuous wave power 40 gb/s prbs input voltage peak to peak 21 dbm tbd t ch operating channel temperature 200 c 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c notes: 1 / these ratings represent the maxi mum operable values for the device. 2 / assure vd - vctrl 8 v. compute vd as follows, vd = v + - id*40 3 / combinations of supply voltage, supply curr ent, input power, and output power shall not exceed p d . 4 / when operated at this power dissipation with a base plate temperature of 70 c, the median life is 3.8e5 hours. 5 / assure vctrl never exceeds vd during bias up and down sequences. also, assure vctrl never exceeds 5v during normal operation. 6 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com table ii rf specifications (t a = 25 c nominal) note test measurement conditions value units min typ max small signal bw 35 ghz 1 /, 2 / small-signal gain magnitude 100khz thru 30ghz 12 db 1 /, 2 / gain flatness 100khz thru 30ghz +/-1 db 3 /,4 / small signal agc range 100khz thru 30ghz 3 db 1 /, 2 / input return loss magnitude 100khz thru 30ghz 10 db 1 /, 2 / output return loss magnitude 100khz thru 30ghz 10 db output power at p1db 100khz thru 30ghz 18 dbm 3 /, 4 / amplitude 40gb/s nrz 4 vpp notes: 1 / verified at die level on-wafer probe (future requirement, data is not currently available). 2 / small signal s-parameter rf probe bias: v+ = 5 v, vctrl=float, adjust vg to achieve id=100ma 3 / verified by design, mmic assembled onto evaluation platform detailed on page 8. 4 / vin=1v, v+=8v, vctrl=float, and vg adjusted for id=100ma.
4 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch ( o c) jc ( q c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vds = 2.5 v* i d = 135 ma pdiss = 0.34 w 92 64 1.5 e+7 * vds = 2.5v across common gate or common source fet in cascode pair. note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 q c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. thermal transfer is conducted thru the bottom of the tga4832 into the mounting carrier. design the mounting interface to assure adequate thermal transfer to the base plate. median lifetime (tm) vs. channel temperature
5 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com measured fixtured data bias conditions: vd = 5v, id= 135ma
6 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com measured fixtured data bias conditions: vd = 5v, id= 135ma 40gb/s nrz 2^31-1 prbs vin=1.8vpp . 40 gb/s data eye
7 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com bias on 1. disable the ppg 2. set vg=-1v 3. set vctrl = 2.2v (if appliable) 4. increase v+ to 7v observing id. - assure id increased to between 10 and 100ma 5. raise v+ to 10.4v - id should still be between 10 and 100ma 6. make vg more positive until id=135ma . - typical value for vg is -0.3v 7. enable the ppg bias off 1. disable the output of the ppg 2. set vctrl = 0v (if appliable) 3. set v+=0v 4. set vg=0v bias procedure for v+ = 10.4 v operation fiber optic applications note: assure vctrl never exceeds vd during bias on and bias off sequences and during normal operation. bias procedure @ vd = 5v operation 1. bias conditions: vd = 5.0 v, id = 135 ma 2. adjust vg for id = 135 ma 3. adjust vctrl for gain and eye crossi ng control. vctrl bias is optional 4. positive or negative gate bias may be required to achieve recommended operating point:- 0.5 v < vg < + 0.5 v note: +5v bias operation requires a bias tee
8 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com mechanical drawing
9 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com recommended assembly diagram recommended components: note: input and output ports are dc coupled. * capacitor value bypassing effective to: none 20 mhz 0.01 uf 4 mhz 0.1 uf 250 khz ** 1800pf & 0.1uf capacitors can be substituted with the following integrated capacitors: vctrl v+ rf out, vd rf in vg 1000pf slc 1800pf slc * * 1800pf slc ** **
10 tga4832 may 2009 ? rev - triquint semiconductor: www. triquint.com (972)994-8465 f ax (972)994-8504 info-mmw@tqs.com assembly notes: reflow attachment: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c use alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere adhesive attachment: organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical component pickup and placement: vacuum pencil and/or vacuum collet preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement interconnect: thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 c evaluation platform assembly notes
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