http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente STT3930N 3.5a , 30v , r ds(on) 58m ? n-channel enhancement mode mosfet 25-nov-2013 rev. a page 1 of 2 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life low thermal impedance copper leadframe tsop-6 saves board space fast switching speed high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, pri nters, pcmcia cards, cellular and cordless telephones. package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a =25c 3.5 continuous drain current 1 t a =70c i d 2.8 a pulsed drain current 2 i dm 16 a continuous source current (diode conduction) 1 i s 1.25 a t a =25c 1.3 power dissipation 1 t a =70c p d 0.8 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating t Q 10 sec 100 maximum junction to ambient 1 steady state r ja 166 c / w notes: 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction tempera ture. millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 2 3 4 5 6 g g s s d d
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente STT3930N 3.5a , 30v , r ds(on) 58m ? n-channel enhancement mode mosfet 25-nov-2013 rev. a page 2 of 2 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250ua gate-body leakage current i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 ua v ds =24v, v gs =0, t j =55 c on-state drain current 1 i d(on) 6 - - a v ds =5v, v gs =10v - - 58 v gs =10v, i d =3.5a drain-source on-resistance 1 r ds(on) - - 82 m v gs =4.5v, i d =3a forward transconductance 1 g fs - 6.9 - s v ds =15v, i d =3.5a diode forward voltage v sd - 0.8 - v i s =2.3a, v gs =0 dynamic 2 total gate charge q g - 2.2 - gate-source charge q gs - 0.5 - gate-drain charge q gd - 0.8 - nc v ds =15v, v gs =4.5v, i d =3.5a turn-on delay time t d(on) - 16 - rise time t r - 5 - turn-off delay time t d(off) - 23 - fall time t f - 3 - ns v dd =25v, v gen =10v, r l =25 , i d =1a notes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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