stt3457p -4 a, -30 v, r ds(on) 60 m ? p-channel enhancement mode mosfet elektronische bauelemente 06-jan-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe tsop-6 saves board space. ? fast switching speed ? high performance trench technology package information package mpq leadersize tsop-6 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25 c i d -4 a t a = 70 c -3.2 pulsed drain current 2 i dm -20 a continuous source current (diode conduction) 1 i s -1.7 a power dissipation 1 t a = 25 c p d 2 w t a = 70 c 1.3 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings maximum junction to ambient 1 t Q 5 sec r ? ja 62.5 c / w steady state 110 notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 d g dd d s
stt3457p -4 a, -30 v, r ds(on) 60 m ? p-channel enhancement mode mosfet elektronische bauelemente 06-jan-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 8v zero gate voltage drain current i dss - - -1 a v ds = -16v, v gs = 0v - - -5 v ds = -20v, v gs = 0v, t j = 55 c on-state drain current 1 i d(on) -20 - - a v ds = -5v, v gs = -4.5v drain-source on-resistance 1 r ds(on) - - 60 m ? v gs = -4.5v, i d = -4.0a,t j = 55 c - - 50 v gs = -10v, i d = -4.0a - - 75 v gs = -4.5v, i d = -3.4a forward transconductance 1 g fs - 10 - s v ds = -5v, i d = -3.4a diode forward voltage v sd - -0.8 - v i s = 1.3a, v gs = 0v dynamic 2 total gate charge q g - 6.4 - nc v ds = -20v, v gs = -5v, i d = -4.0a gate-source charge q gs - 2 - gate-drain charge q gd - 3.8 - turn-on delay time t d(on) - 7 - ns v dd = -20v, v gen = -10v, r l = 6 ? , i d = -1a rise time t r - 10 - turn-off delay time t d(off) - 30 - fall time t f - 22 - notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
stt3457p -4 a, -30 v, r ds(on) 60 m ? p-channel enhancement mode mosfet elektronische bauelemente 06-jan-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
stt3457p -4 a, -30 v, r ds(on) 60 m ? p-channel enhancement mode mosfet elektronische bauelemente 06-jan-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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