rb861y diodes rev.b 1/2 schottky barrier diode rb861y z applications z dimensions (unit : mm) z land size figure (unit : mm) high frequency detection z features 1) ultra small mold type. (emd4) 2) low ct and high detectionefficiency. z construction z structure silicon epitaxial planar z taping specifications (unit : mm) z absolute maximum ratings (ta=25 q c) z electrical characteristics (ta=25 q c) :w :?::?:? :?:?:? :?:?:?:? :?:?:? :?:?:?:? symbol min. typ. max. unit v f - - 0.29 v i f =1ma i r --30 a v r =1v capacitance between terminal ct - 0.85 1.10 pf v r =0v , f=1mhz conditions forward voltage reverse current parameter symbol unit v r v i f ma tj =? tstg =? limits 5 10 parameter reverse voltage forward current 125 -40 to +125 junction temperature storage temperature (*1) rating of per diode :?:?:?:?:?:?:?:? :?:?:?:?:?:?:? :?:?:?:?:?:?:? :?:?:?:?:?:?:?:? :?:?:? :?::?: :?:?:?:?:?:?:?:?:? :?:?:?:?:?:?:?:? ! :?:|:?::w:?:w:?::?:? :?:?:?:?:?:w:?:w:a:?:?:?:?:?:w:w:a::?:? :?:?:?:w::e:?:?::w:?:?:?:a:w:?:?:o:?:?::e:? :?:?:?:?:?:?:?:?:? :?:?:?:?:?:?:?:? :?c>:?:?:?
|