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| rf & protection devices data sheet revision 3.1 (min/max), 2014-02-11 BGA7H1N6 silicon germanium low no ise amplifier for lte
edition 2014-02-11 published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA7H1N6 data sheet 3 revision 3.1 (min/max), 2014-02-11 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organi zation for standardization. matlab? of mathworks, inc. maxim? of maxim integrated pr oducts, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 revision history page or item subjects (major changes since previous revision) revision 3.1 (min/max), 2014-02-11 10-13 min/max values added revision 3.0, 2014-02-10 7 marking added 10-13 electrical characteristics updated 10-13 footnotes updated BGA7H1N6 table of contents data sheet 4 revision 3.1 (min/max), 2014-02-11 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.1 measured rf characteristics band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2 measured rf characteristics band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.1 application circuit schematic band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.2 application circuit schematic band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table of contents BGA7H1N6 list of figures data sheet 5 revision 3.1 (min/max), 2014-02-11 figure 1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 figure 2 application schematic BGA7H1N6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 3 application schematic BGA7H1N6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 4 drawing of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 5 application board cross-section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 6 tsnp-6-2 package outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 7 footprint recommendation tsnp-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 8 marking layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 9 tape & reel dimensions (reel diameter 180 mm, piec es/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 18 list of figures BGA7H1N6 list of tables data sheet 6 revision 3.1 (min/max), 2014-02-11 table 1 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4 electrical characteristics: t a = 25 c, v cc = 1.8 v, v pon,on = 1.8 v, v pon,off = 0 v, f = 2620 - 2690 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5 electrical characteristics: t a = 25 c, v cc = 2.8 v, v pon,on = 2.8 v, v pon,off = 0 v, f = 2620 - 2690 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 6 electrical characteristics: t a = 25 c, v cc = 1.8 v, v pon,on = 1.8 v, v pon,off = 0 v, f = 2300 - 2400 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 7 electrical characteristics: t a = 25 c, v cc = 2.8 v, v pon,on = 2.8 v, v pon,off = 0 v, f = 2300 - 2400 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 8 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 9 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 list of tables product name marking package BGA7H1N6 a tsnp-6-2 silicon germanium low noi se amplifier for lte BGA7H1N6 data sheet 7 revision 3.1 (min/max), 2014-02-11 features ? insertion power gain: 12.5 db ? low noise figure: 0.60 db ? low current consumption: 4.7 ma ? operating frequencies: 2300 - 2690 mhz ? supply voltage: 1.5 v to 3.3 v ? digital on/off switch (1v logic high level) ? ultra small tsnp-6-2 leadless package (footprint: 0.7 x 1.1 mm 2 ) ? b7hf silicon germ anium technology ? rf output internally matched to 50 ? only 1 external smd component necessary ? 2kv hbm esd protection (including ai-pin) ? pb-free (rohs compliant) package figure 1 block diagram BGA7H1N6_blockdiagram.vsd ai ao gnd pon vcc esd BGA7H1N6 features data sheet 8 revision 3.1 (min/max), 2014-02-11 description the BGA7H1N6 is a front-e nd low noise amplifier for lte which covers a wide frequency range from 2300 mhz to 2690 mhz. the lna provides 12.5 db gain and 0.60 db noise figure at a current consumption of 4.7 ma in the application configuration described in chapter 3 . the BGA7H1N6 is based upon infineon technologies? b7hf silicon germanium technology. it operates from 1.5 v to 3.3 v supply voltage. pin definition and function table 1 pin definition and function pin no. name function 1 gnd ground 2 vcc dc supply 3 ao lna output 4 gnd ground 5 ai lna input 6 pon power on control BGA7H1N6 maximum ratings data sheet 9 revision 3.1 (min/max), 2014-02-11 1 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. thermal resistance table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. voltage at pin vcc v cc -0.3 ? 3.6 v 1) 1) all voltages refer to gnd-node unless otherwise noted voltage at pin ai v ai -0.3 ? 0.9 v ? voltage at pin ao v ao -0.3 ? v cc + 0.3 v ? voltage at pin pon v pon -0.3 ? v cc + 0.3 v ? voltage at pin gndrf v gndrf -0.3 ? 0.3 v ? current into pin vcc i cc ??16ma? rf input power p in ??0dbm? total power dissipation, t s BGA7H1N6 electrical characteristics data sheet 11 revision 3.1 (min/max), 2014-02-11 table 5 electrical characteristics: 1) t a = 25 c, v cc = 2.8 v, v pon,on = 2.8 v, v pon,off = 0 v, f = 2620 - 2690 mhz 1) based on the application described in chapter 3 parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 1.5 ? 3.3 v ? supply current i cc ? 4.8 5.8 ma on-mode ?0.23 a off-mode power on voltage v pon 1.0 ? vcc v on-mode 0 ? 0.4 v off-mode power on current i pon ?1015 a on-mode ??1 a off-mode insertion power gain | s 21 | 2 11.1 12.6 14.1 db ? noise figure 2) 2) pcb losses are subtracted nf ? 0.65 1.2 db z s =50 input return loss 3) 3) verification based on aql; not 100% tested in production rl in 811?db? output return loss 3) rl out 10 19 ? db ? reverse isolation 3) 1/| s 12 | 2 16 20 ? db ? power gain settling time 4)5) 4) to be within 1 db of the final gain 5) guaranteed by device design; not tested in production t s ?36 s off- to on-mode inband input 1db-compression point 3) ip 1db -5 -1 ? dbm ? inband input 3 rd -order intercept point 6)3) 6) input power = -30 dbm for each tone iip 3 +1 +6 ? dbm f 1 = 2650 mhz f 2 = f 1 +/-10 mhz stability 5) k ?> 1? f = 20 mhz ... 10 ghz BGA7H1N6 electrical characteristics data sheet 12 revision 3.1 (min/max), 2014-02-11 2.2 measured rf characteristics band 40 table 6 electrical characteristics: 1) t a = 25 c, v cc = 1.8 v, v pon,on = 1.8 v, v pon,off = 0 v, f = 2300 - 2400 mhz 1) based on the application described in chapter 3 parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 1.5 ? 3.3 v ? supply current i cc ? 4.7 5.7 ma on-mode ?0.23 a off-mode power on voltage v pon 1.0 ? vcc v on-mode 0 ? 0.4 v off-mode power on current i pon ?510 a on-mode ??1 a off-mode insertion power gain | s 21 | 2 10.9 12.4 13.9 db ? noise figure 2) 2) pcb losses are subtracted nf ? 0.60 1.2 db z s =50 input return loss 3) 3) verification based on aql; not 100% tested in production rl in 68?db? output return loss 3) rl out 69?db? reverse isolation 3) 1/| s 12 | 2 17 21 ? db ? power gain settling time 4)5) 4) to be within 1 db of the final gain 5) guaranteed by device design; not tested in production t s ?47 s off- to on-mode inband input 1db-compression point 3) ip 1db -9 -5 ? dbm ? inband input 3 rd -order intercept point 6)3) 6) input power = -30 dbm for each tone iip 3 0+5?dbm f 1 = 2350 mhz f 2 = f 1 +/-10 mhz stability 5) k ?> 1? f = 20 mhz ... 10 ghz BGA7H1N6 electrical characteristics data sheet 13 revision 3.1 (min/max), 2014-02-11 table 7 electrical characteristics: 1) t a = 25 c, v cc = 2.8 v, v pon,on = 2.8 v, v pon,off = 0 v, f = 2300 - 2400 mhz 1) based on the application described in chapter 3 parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 1.5 ? 3.3 v ? supply current i cc ? 4.8 5.8 ma on-mode ?0.23 a off-mode power on voltage v pon 1.0 ? vcc v on-mode 0 ? 0.4 v off-mode power on current i pon ?1015 a on-mode ??1 a off-mode insertion power gain | s 21 | 2 11.0 12.5 14.0 db ? noise figure 2) 2) pcb losses are subtracted nf ? 0.60 1.2 db z s =50 input return loss 3) 3) verification based on aql; not 100% tested in production rl in 69?db? output return loss 3) rl out 69?db? reverse isolation 3) 1/| s 12 | 2 17 21 ? db ? power gain settling time 4)5) 4) to be within 1 db of the final gain 5) guaranteed by device design; not tested in production t s ?36 s off- to on-mode inband input 1db-compression point 3) ip 1db -6 -2 ? dbm ? inband input 3 rd -order intercept point 6)3) 6) input power = -30 dbm for each tone iip 3 +1 +6 ? dbm f 1 = 2350 mhz f 2 = f 1 +/-10 mhz stability 5) k ?> 1? f = 20 mhz ... 10 ghz BGA7H1N6 application information data sheet 14 revision 3.1 (min/max), 2014-02-11 3 application information 3.1 application circui t schematic band 7 figure 2 application schematic BGA7H1N6 a list of all application notes is available at http://www.infineon.com/gpslna.appnotes . table 8 bill of materials name part type package manufacturer function c1 (optional) chip capacitor 0402 various dc block 1) 1) dc block might be realized with pre-filter in lte applications c2 (optional) 1nf 2) 2) for data sheet characteristics 1nf used 0402 various rf bypass 3) 3) rf bypass recommended to mitigate power supply noise l1 chip inductor 0402 murata lqw type input matching n1 BGA7H1N6 tsnp-6-2 infineon sige lna BGA7H1N6_b7_schematic.vsd n1 BGA7H1N6 ai, 5 pon, 6 gndrf, 4 gnd, 1 ao, 3 vcc, 2 c1 1nf (optional) l1 3.3nh pon vcc c2 1nf (optional) rfin band 7 rfout band 7 BGA7H1N6 application information data sheet 15 revision 3.1 (min/max), 2014-02-11 3.2 application circui t schematic band 40 figure 3 application schematic BGA7H1N6 a list of all application notes is available at http://www.infineon.com/gpslna.appnotes . table 9 bill of materials name part type package manufacturer function c1 (optional) chip capacitor 0402 various dc block 1) 1) dc block might be realized with pre-filter in lte applications c2 (optional) 1nf 2) 2) for data sheet characteristics 1nf used 0402 various rf bypass 3) 3) rf bypass recommended to mitigate power supply noise l1 chip inductor 0402 murata lqw type input matching n1 BGA7H1N6 tsnp-6-2 infineon sige lna BGA7H1N6_b40_schematic.vsd n1 BGA7H1N6 ai, 5 pon, 6 gndrf, 4 gnd, 1 ao, 3 vcc, 2 c1 1nf (optional) l1 4.1nh pon vcc c2 1nf (optional) rfin band 40 rfout band 40 BGA7H1N6 application information data sheet 16 revision 3.1 (min/max), 2014-02-11 figure 4 drawing of application board figure 5 application board cross-section bga7x1n6_application_board.vsd ? ? copper 35 m vias vias ro4003, 0.2mm fr4,0.8mm bga7x1n6_application _board _sideview.vsd BGA7H1N6 package information data sheet 17 revision 3.1 (min/max), 2014-02-11 4 package information figure 6 tsnp-6-2 package outline (top, side and bottom views) figure 7 footprint recommendation tsnp-6-2 figure 8 marking layout (top view) 0.02 max. 0.05 0.7 0.05 0.2 0.05 1) 0.05 0.2 1) 0.4 1.1 0.05 1) dimension applies to plated terminals 5 2 6 4 1 3 top view bottom view pin 1 marking tsnp-6-2-po v01 0.8 0.05 +0.025 0.375 -0.015 0.25 0.4 0.25 0.4 0.25 0.4 0.25 0.4 tsnp-6-2-fp v01 stencil apertures copper solder mask (stencil thickness 100 m) nsmd type code monthly data code tsnp-6-2-mk v01 pin 1 marking 1 BGA7H1N6 package information data sheet 18 revision 3.1 (min/max), 2014-02-11 figure 9 tape & reel dimensions (reel diameter 180 mm, pieces/reel 15000) 2 0.5 pin 1 marking tsnp-6-2-tp v01 0.85 1.25 8 published by infineon technologies ag www.infineon.com |
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