rb731u diodes rev.b 1/3 schottky barrier diode rb731u z applications low current rectification z features 1) small mold type. (smd6) 2) low i r 3) high reliability z external dimensions (unit : mm) z land size figure (unit : mm) z construction silicon epitaxial planar z structure z taping specifications (unit : mm) z absolute maximum ratings (ta=25 q c) z electrical characteristics (ta=25 q c) :a::?:? :?:?:?::?::? :?:? :?:?:? :?:?:?::?::? :?:?:?:? :?:?:?:? :?:?:?:? :?:?:?:? :?:?:?:? :?:?:?:? :?:?:? symbol min. typ. max. unit forward voltage v f --0.37v i f =1ma reverseu current i r --1 a v r =10v capacitance between terminals ct - 2.0 - pf v r =1v , f=1mhz parameter conditions symbol unit v rm v v r v io ma i fsm ma tj =? tstg =? storage temperature -40 to +125 (*1)per chip ! io/3 forward current surge peak (60hz 1cyc) 200 junction temperature 125 reverse voltage (dc) 40 average rectified forward current (*1) 30 parameter limits reverse voltage (repetitive peak) 40 :?:|:?::w:?:w:a::?:? :?:?:?:?:?:w:?:w:a:?:?:?:? :?:?:?:?:?:w:?:a:?:?:?:?:?:? :?:?:?:a:w:o:?:?:? :?:::?:w::?::a r r r 9 9 &]o<?y+?: :*
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