01/99 b-43 IFN860 dual n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 20 v continuous forward gate current 50 ma continuous device power dissipation 400 mw power derating 2.3 mw/c storage temperature range C 65c to 200c toe71 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate, 5 source, 6 drain, 7 gate at 25c free air temperature: IFN860 process nj450l static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 20 v i g = C 1 a, v ds = ? v gate reverse leakage voltage i gss 3nav gs = C 10 v, v ds = ?v gate source cutoff voltage v gs(off) C 0.3 C 3 v v ds = 10 v, i d = 100 a drain saturation current (pulsed) i dss 10 ma v ds = 10 v, v gs = ? v differential gate source voltage |v gs1 C v gs2 | 25 mv v ds = 10 v, i d = 100 a dynamic electrical characteristics transconductance g m 25 40 ms v ds = 10 v, i d = C 10 ma f = 1 khz common source input capacitance c iss 30 35 pf v ds = 10 v, i d = C 10 ma f = 1 mhz common source reverse transfer c rss 17 20 pf v ds = 10 v, i d = C 10 ma f = 1 mhz capacitance equivalent short circuit e n 2 nv/ hz v dg = 3 v, i d = 10 ma f = 1 khz input noise voltage low-noise audio amplifier equivalent to crystalonics cd860 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 12:22 pm page b-43
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