msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 description the msf 2n7 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all co mmercial - industrial applications features ? 100% eas test ? rugged gate oxide technology ? extremely low intrinsic capacitances ? remarkable switching characteristics ? unequalled gate charge: 10.5 nc (typ.) ? extended safe operating area lower rds(on) : 5.5 (typ.) @vgs=10v ? rohs compliant package application ? adapter ? switching mode power supply packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symb ol parameter value unit v ds drain - source voltage 700 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 1.6 a drain current - continuous (tc= 100 c ) 1.0 a i dm pulsed drain current 6.0 a e as s ingle pulsed avalanche energy 140 mj e a r repetitive avalanche energy 4.4 mj dv/dt peak diode recovery dv/dt 5.5 v/ns
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d power dissipation (tc=25 c) power dissipation (tc= 100 c) 45 w 0.22 w/ c t j ,t stg operating and storage temperatu re range - 55 to +150 c note: 1. repetitive rating; pulse width limited by maximum junction temperature. thermal characteristics (tc=25c unless otherwise noted) symbol parameter max. unit s rthjc typical thermal resistance 2.7 c /w r ja typical therma l resistance 62.5 static characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs ,i d = 250a ds(on) v gs = 10 v,i d = 0.8 a -- 5.5 6.0 dss v gs = 0 v , i d = 250a dss / j i d = 250a, referenced to 25 dss v ds = 70 0 v , v gs = 0 v v ds = 56 0 v , v gs = 0 v , t j = 125 c -- -- 10 100 a gss f v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gssr v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a dynamic characteristics symbol test conditions min typ. max. unit s c iss v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 340 445 pf c oss -- 45 60 pf c rss -- 7.5 10 pf t d(on) v ds = 35 0 v, i d = 1.6 a, r g = 25 r -- 25 50 ns t d(off) -- 20 40 ns tf -- 25 50 ns q g v ds = 56 0 v,i d = 1.6 a, v gs = 10 v -- 10.5 1414 nc q gs -- 2.0 -- q g d -- 4.0 --
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 source - drain diode characteristics symbol test conditions min typ. max. unit s i s -- -- 1.6 a i sm -- -- 6 v sd i s = 1.6 a , v gs = 0 v -- -- 1.5 v t rr i s = 1.6 a , v gs = 0 v dif/dt=100a/s rr - - 1.2 -- notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 1.6 a, v dd =5 0 v, r g =25 w , starting t j =25 3. i sd Q 1.6 a, di/dt Q . 00a/ s,v dd Q bv dss , starting t j =25 4. pulse test: pulse width Q 300 s, duty cycle Q 2% 5. essentia lly independent of operating temperature
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge te st circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & waveforms
msf2n 7 0 7 00v n - channel mosfet publication order number: [ msf 2n7 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incide ntal damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells k nowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to valida te that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary ove r time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
|
