IRG4MC40U insulated gate bipolar transistor e c g features benefits v ces = 600v v ce(on)max = 2.1v @ v ge = 15v , i c = 20a parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 35* i c @ t c = 100c continuous collector current 20 a i cm pulsed collector current 140 i lm clamped inductive load current 140 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 114 w p d @ t c = 100c maximum power dissipation 45 t j operating junction and -55 to + 150 t stg storage temperature range c lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g absolute maximum ratings www.irf.com 1 ultrafast speed igbt ? electrically isolated and hermetically sealed ? simple drive requirements ? latch-proof ? ultrafast speed operation 8khz - 40khz, > 200khz in resonent mode ? high operating frequency ? switching-loss rating includes all "tail" losses ? ceramic eyelets ? generation 4 igbts offer highest efficiency available ? igbt's optimized for specified application conditions ? designed to be a "drop-in" replacement for equivalent ir a&d generation 3 igbts insulated gate bipolar transistors (igbts) from international rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power mosfet. they provide substantial benefits to a host of high-voltage, high- current applications. to-254aa thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.1 c/w
n-channel pd-94305f
2 www.irf.com IRG4MC40U parameter min. typ. max. units conditions q g total gate charge (turn-on) ??? ??? 150 i c = 20a q ge gate - emitter charge (turn-on) ??? ??? 25 nc v cc = 300v see fig. 8 q gc gate - collector charge (turn-on) ??? ??? 60 v ge = 15v t d(on) turn-on delay time ??? ??? 50 t j = 25c t r rise time ??? ??? 42 i c = 20a, v cc = 480v t d(off) turn-off delay time ??? ??? 190 v ge = 15v, r g = 9.1 ? t f fall time ??? ??? 150 energy losses include "tail" e ts total switching loss ??? ??? 1.0 mj see fig. 10, 11, 13, 14 t d(on) turn-on delay time ??? ??? 40 t j = 125c, t r rise time ??? ??? 40
i c = 20a, v cc = 480v t d(off) turn-off delay time ??? ??? 300 v ge = 15v, r g = 9.1 ? t r rise time ??? ??? 250 energy losses include "tail" e ts total switching loss ??? ??? 1.8 mj see fig. 13, 14 l c +l e total inductance ??? 6.8 ??? nh measured from collector lead (6mm/ 0.25in. from package) to emitter lead (6mm / 0.25in. from package) c ies input capacitance ??? 2215 ??? v ge = 0v c oes output capacitance ??? 135 ??? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ??? 25 ??? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 1.0 ma v (br)ecs emitter-to-collector breakdown voltage 17 ??? ??? v v ge = 0v, i c = 1.0 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.5 ??? v/c v ge = 0v, i c = 1.0 ma ??? ??? 2.1 i c = 20a v ge = 15v v ce(on) collector-to-emitter saturation voltage ??? ??? 2.5 v i c = 35a see fig.2, 5 ??? ??? 2.1 i c = 20a , t j = 125c v ge(th) gate threshold voltage 3.0 ??? 6.0 v ce = v ge , i c = 1.0 ma ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -12 ??? mv/c v ce = v ge , i c = 250 a g fe forward transconductance 11 ??? ??? s v ce 15v, i c = 20a ??? ??? 50 v ge = 0v, v ce = 480v ??? ??? 2000 v ge = 0v, v ce = 480v, t j = 125c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current switching characteristics @ t j = 25c (unless otherwise specified)
pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. notes: repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. (see fig.13b) v cc = 80%(v ces ), v ge = 20v, l = 100h, r g = 9.1 ? , (see fig.13a)
www.irf.com 3 IRG4MC40U fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 0.1 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 4 6 8 10 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 29w triangular wave: clamp voltage: 80% of rated 60% of rat ed voltage ideal di odes square wave:
4 www.irf.com IRG4MC40U fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1.0 2.0 3.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 40a v ge = 15v 80s pulse width i c = 20a i c = 10a 25 50 75 100 125 150 t j , junction temperature (c ) 0 10 20 30 40 50 m a x i m u m d c c o l l e c t o r c u r r e n t ( ) vge = 15v limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 5 IRG4MC40U fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 r g , gate resistance ( ? ) 0.50 0.75 1.00 t o t a l s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 20a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 9.1 ? v ge = 15v v cc = 480v i c = 40a i c = 20a i c = 10a 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 20a cc c 300v
6 www.irf.com IRG4MC40U fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 10 20 30 40 i c , collector current (a) 0.0 1.0 2.0 3.0 4.0 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 9.1 ? tj = 150c v ge = 15v v cc = 480v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 20v t j = 125 safe operating area 125c
www.irf.com 7 IRG4MC40U
d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v
t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit
8 www.irf.com IRG4MC40U case outline and dimensions ? to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/2008 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es :
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