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| 1 sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 features high current (max. 1 a) low voltage (max. 20 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -32 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current (dc) i c -1 a peak collector current i cm -2 a peak base current i bm -200 ma total power dissipation t amb 25 p d 1.35 w storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient r th(j-a) 91 k/w thermal resistance from junction to solder point r th(j-s) 10 k/w 1base 2 ,4 collector 3 emitter electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0a;v cb = -25 v -100 na i e =0a;v cb = -25 v; tj = 150 -10 a emitter cutoff current i ebo i c =0a;v eb = -5 v -100 na dc current gain v ce =-10v;i c =-5ma 50 v ce =-1v;i c = -500 ma 85 375 v ce =-1v;i c =-1a 60 dc current gain bcp69-16 100 250 bcp69-25 160 375 collector-emitter saturation voltage i c =-1a;i b = -100 ma; -500 mv v ce =-10v;i c = -5 ma -620 mv v ce =-1v;i c =-1a -1 v collector capacitance c c i e =ie=0a;v cb =-5v;f=1mhz 48 pf transition frequency f t i c =-10ma;v ce =-5v;f=100mhz 40 mhz h fe v ce =-1v;i c = -500 ma base-emitter voltage v be collector cutoff current i cbo v cesat marking marking bcp69 kc p6 9 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
typlcal characteristics fig.1 dc current gain; typical values. kc p6 9 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com |
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