, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. buz 50 a n channel enhancement mode telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pin 1 pin 2 pin 3 type buz 50 a vds 1000v id 2.5 a ^ds(on) 5q package to-220 ab maximum ratings parameter drain source voltage drain-gate voltage rgb = 20 kq continuous drain current tc = 25 c pulsed drain current tc = 25 c gate source voltage power dissipation tc = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol vds dgr id /dpuls vgs ptoi t\ ctn ftthjc ^thja values 1000 1000 2.5 10 20 75 -55 + 150 -55 + 150 <1.6 75 e 55/150/56 unit v a v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
buz 50 a electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage vgs^ds, to= 1 ma zero gate voltage drain current vds = 1000 v, vgs = 0 v, 7j = 25 c vds = 1000 v, vgs = 0 v, 7] = 125 c gate-source leakage current vgs = 20 v, vds = o v drain-source on-resistance vgs = 10v, /d = 1-5 a ^(br)dss vgs(th) toss /gss kds(on) 1000 2.1 - - - - - 3 20 100 10 4.5 - 4 250 1000 100 5 v ua na q
buz 50 a electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * f?ds(on)max, /d = 1 -5 a input capacitance vgs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v, vds = 25 v, f= 1 mhz reverse transfer capacitance vgs = 0 v, vds = 25 v, f= 1 mhz turn-on delay time vbd = 30v, vgs = 10v,/d = 2a rgs = 50 q rise time vdd = 30v, vgs = 10v, /d = 2a rgs = 50 i turn-off delay time vbd = 30v, vgs = 10v, /d = 2a rgs = so a fall time vdd = 30v, vgs = 10v, /d = 2a rgs = 50 q sfs qss coss qss 'd(on) fr td(off) buz 50 a electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current,pulsed tc = 25 c inverse diode forward voltage vgs = 0 v, /f = 6 a reverse recovery time vr = 100 v, /f=/s] d/f/df = 100 a/us reverse recovery charge vr = 100 v, /f=/s| d/f/df = 100 a/us /s 'sm vsd frr qrr - - - - - - - 1.05 2 15 2.5 10 1.3 - - a v us mc
|
